Fujitsu starts mass-production of 4Mbit FeRAM with 125°C operation conforming to automotive grade
Non-volatile memory optimal for applications in automobiles and industrial machinery that require high reliability in high-temperature environments
Fujitsu Semiconductor Memory Solution Limited is offering 4Mbit FeRAM MB85RS4MTY in mass-production. (Fig.1)
Complying with AEC-Q100 Grade 1, a qualification requirement for products as "automotive grade", this FeRAM product is optimal for industrial robots and automotive applications such as advanced driver-assistance systems (ADAS) which require electronic components with high reliability. (Fig.2)
FeRAM is a non-volatile memory product with superior features of high read/write endurance, fast writing speed operation and low power consumption, and it has been mass-produced for over 20 years.
Since mass-production of FeRAM products capable to operate up to 125°C started in July 2017, its product lineup has been expanding. (Fig.3) This time the 4Mbit FeRAM MB85RS4MTY, which has the largest density in the 125°C-operating FeRAM product family, is added to mass-production this month.
This FeRAM with an SPI interface operates at a wide power supply voltage from 1.8V to 3.6V. In the temperature range from -40°C to +125°C, it guarantees 10 trillion read/write cycle times and low operating currents such as a maximum write current of 4mA (operated at 50MHz). It is housed in an 8-pin DFN (Dual Flatpack No-leaded) package.
The MB85RS4MTY meets the high reliability testing to satisfy AEC-Q100 Grade 1, a qualification requirement for products as "automotive grade", therefore, suitable for high performance industrial robots and automotive applications such as advanced driver-assistance systems (ADAS).
Our FeRAM products can solve following issues arising from using EEPROM or SRAM for high reliability applications.
Customers’ issues and solutions
- Status: Using EEPROM
Issue: Having difficulties for more frequent data logging due to the limit of write endurance spec
Solution: Use of FeRAM guaranteed 10 trillion read/write cycles
- Status: Using EEPROM
Issue: Having risks to lose data in writing at sudden accident or power outage
Solution: Use of FeRAM featuring fast writing to protect data in writing at power outage
- Status: Using SRAM
Issue: Difficult to remove a battery for data retention
Solution: Use of FeRAM as a non-volatile memory
In summary, our FeRAM products bring to customers benefits like reduced development burden, enhanced customer’s product performance, and lower costs. (Fig.4)
Fujitsu Semiconductor Memory Solution Limited continues to develop memory products to satisfy the needs and requirements from the market and customers.
|Density (configuration)||4Mbit (512K x 8bit)|
|Interface||SPI (Serial Peripheral Interface)|
|Operating frequency||50MHz maximum|
|Operating voltage||1.8V to 3.6V|
|Operating temperature range||-40℃ to +125℃|
|Read/Write endurance||10 trillion times (1013 times)|
|Qualification standard||AEC-Q100 Grade 1 compliant|
- Datasheet: MB85RS4MTY(AEC-Q100 compliant, including 8-pin DFN package)
- (Reference) Datasheet: MB85RS4MTY(for general use, including 8-pin SOP and 8-pin DFN package)
- MB85RS4MTY introduction website (Archieve: released in July 2020 [PDF])
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