Fujitsu starts mass-production of 4Mbit FeRAM with 125°C operation conforming to automotive grade

Non-volatile memory optimal for applications in automobiles and industrial machinery that require high reliability in high-temperature environments

Overview

Fujitsu Semiconductor Memory Solution Limited is offering 4Mbit FeRAM MB85RS4MTY in mass-production. (Fig.1)
Complying with AEC-Q100 Grade 1, a qualification requirement for products as "automotive grade", this FeRAM product is optimal for industrial robots and automotive applications such as advanced driver-assistance systems (ADAS) which require electronic components with high reliability. (Fig.2)

Fig.1: MB85RS4MTY 8-pin DFN (Top・Bottom)

Fig.2: Examples of FeRAM usage

Details

FeRAM is a non-volatile memory product with superior features of high read/write endurance, fast writing speed operation and low power consumption, and it has been mass-produced for over 20 years.

Since mass-production of FeRAM products capable to operate up to 125°C started in July 2017, its product lineup has been expanding. (Fig.3) This time the 4Mbit FeRAM MB85RS4MTY, which has the largest density in the 125°C-operating FeRAM product family, is added to mass-production this month.

Fig.3: 125℃-operating FeRAM product lineup

This FeRAM with an SPI interface operates at a wide power supply voltage from 1.8V to 3.6V. In the temperature range from -40°C to +125°C, it guarantees 10 trillion read/write cycle times and low operating currents such as a maximum write current of 4mA (operated at 50MHz). It is housed in an 8-pin DFN (Dual Flatpack No-leaded) package.

The MB85RS4MTY meets the high reliability testing to satisfy AEC-Q100 Grade 1, a qualification requirement for products as "automotive grade", therefore, suitable for high performance industrial robots and automotive applications such as advanced driver-assistance systems (ADAS).

Our FeRAM products can solve following issues arising from using EEPROM or SRAM for high reliability applications.

Customers’ issues and solutions

1. Status: Using EEPROM
   Issue: Having difficulties for more frequent data logging due to the limit of write endurance spec
   Solution: Use of FeRAM guaranteed 10 trillion read/write cycles
2. Status: Using EEPROM
   Issue: Having risks to lose data in writing at sudden accident or power outage
   Solution: Use of FeRAM featuring fast writing to protect data in writing at power outage
3. Status: Using SRAM
   Issue: Difficult to remove a battery for data retention
   Solution: Use of FeRAM as a non-volatile memory

In summary, our FeRAM products bring to customers benefits like reduced development burden, enhanced customer’s product performance, and lower costs. (Fig.4)

Fig.4: Customers' issues and solutions

Fujitsu Semiconductor Memory Solution Limited continues to develop memory products to satisfy the needs and requirements from the market and customers.

Key Specifications

Related Links

• Datasheet: MB85RS4MTY(AEC-Q100 compliant, including 8-pin DFN package)
• (Reference) Datasheet: MB85RS4MTY(for general use, including 8-pin SOP and 8-pin DFN package)
• MB85RS4MTY introduction website (Archieve: released in July 2020 [PDF])

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