August 7, 2023
Fujitsu Semiconductor Memory Solution Limited
Fujitsu Launches Automotive Grade I2C-interface 512Kbit FeRAM with 125°C Operation
- Non-volatile memory optimal for applications in automobiles and industrial machinery that require high reliability in high-temperature environments -
Fujitsu Semiconductor Memory Solution Limited today announced the launch of I2C-interface 512Kbit FeRAM, “MB85RC512LY,” which is the highest density in Fujitsu’s automotive-grade FeRAM products with I2C interface. Evaluation samples are currently available. (Fig.1)
This product guarantees low operating current and 10 trillion read/write cycle times in the high temperature at 125°C. The FeRAM product is optimal for industrial robots and automotive applications such as Advanced Driver-Assistance Systems (ADAS). (Fig.2)
Customers using I2C interface for their platform do not need major design modifications in developing an end-product by using this FeRAM for memory parts.
Since 2017, Fujitsu has been mass-producing 64Kbit to 4Mbit automotive-grade FeRAM products that operate in an environment of up to 125°C with SPI interface. However, for customers who were already using memory devices on I2C-interface platforms, there was the issue of having to redesign the interface of their final products. On this background, we have been developing FeRAM products with I2C interface and have succeeded in developing the 512Kbit FeRAM "MB85RC512LY" that operates at a low power supply voltage of 1.8V.
The MB85RC512LY is a 512Kbit non-volatile memory device that operates at a low power supply voltage from 1.7V to 1.95V. It features extremely low operating current such as a maximum of 0.4mA at 3.4MHz operation and guarantees 10 trillion read/write cycle times in the temperature range from -40°C to +125°C. This characteristic is optimal for some applications that require real-time data logging. For instance, data can be recorded at the same address for 10 years even when the data is rewritten every 0.03 milliseconds.
The new FeRAM product can solve the following issues arising from the use of memory products. (Fig.3)
Fig.3: Customers’ Issues and Solutions
Case 1. Customers using I2C-interface conventional memory in their system
- Issue: Want to use FeRAM but no I2C-interface products with 125°C operation so far
- Solution: Use the new FeRAM. No interface design change in the system is needed.
Case 2. Customers want 512Kbit memory with 125°C operation
- Issue: Have to get higher-density memory than 512Kbit because of lack of suitable density
- Solution: Use the new FeRAM with exact density. No need to purchase high-density memory.
Case 3. Customers using EEPROM with 125°C operation
- Issue: Have design limitation because of writing endurance up to 1 million times.
- Solution: Use the new FeRAM with read/write endurance up to 10 trillion times.
The automotive-grade FeRAM family has variations of 3.3V and 1.8V operation for both I2C and SPI-interface products. With the launch of MB85RC512LY, the AEC-Q100 compliant FeRAM family has added 7 new products since the last year. In addition, 4 new types of 1Mbit products are currently under development. (Fig.4)
Fujitsu Semiconductor Memory Solution believes that the required memory density needs to be varied because the applications sought by customers are diverse. We will continue to provide optimal memory products and solutions to enhance the value and convenience of customer applications.
Fig.4: Automotive-grade FeRAM Lineup
|Density (configuration)||512Kbit (64K x 8bit)|
|Interface||I2C interface (Inter-Integrated Circuit)|
|Operating frequency||3.4MHz (max.)|
|Operating voltage||1.7V to 1.95V|
|Operating temperature range||-40°C to +125°C|
|Read/Write endurance||10 trillion times (1013 times)|
|Package||8-pin DFN, 8-pin SOP|
|Low power consumption||Operating current: 0.4mA (max.)
Standby current: 150µA (max.)
Glossary and Notes
- * FeRAM:Ferroelectric Random Access Memory
Ferroelectric random-access memory. A type of memory that uses a ferroelectric file as capacitors that store data. Retains contents even when power is removed. Combines benefits of both ROM and RAM, with fast write speed, low-power consumption, and high read/write cycle endurance. Produced by Fujitsu Semiconductor Memory Solution since 1999.
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About Fujitsu Semiconductor Memory Solution Limited
Fujitsu Semiconductor Memory Solution focuses on high-quality and highly reliable non-volatile memory like Ferroelectric Random Access Memory (FeRAM) and Resistive Random Access Memory (ReRAM). Headquartered in Yokohama, we were established as a subsidiary of Fujitsu Semiconductor Limited on March 31, 2020. Through our global sales and development network, with sites in Japan and throughout Asia, Europe, and the Americas, we offer semiconductor memory solutions to the global marketplace. For more information, please see: https://www.fujitsu.com/jp/group/fsm/en/
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