January 18, 2022
Fujitsu Semiconductor Memory Solution Limited
Fujitsu Launches 8Mbit Quad SPI FeRAM Capable of 54MB/s Data Writing
- Non-volatile Memory IC, Ideal for Industrial High-performance Computing, Achieving High-speed Operation in High-temperature Environments -
Yokohama, Japan, January 18, 2022 – Fujitsu Semiconductor Memory Solution Limited today announced the launch of 8Mbit FeRAM MB85RQ8MLX with Quad SPI interface, which is the largest density in Fujitsu’s SPI interface FeRAM product family. Evaluation samples are currently available. (Fig.1)
This new product achieves a fast data transfer rate of 54MB per second at maximum 108MHz of operating frequency in high-temperature environments up to 105°C. Featuring high-speed operation and non-volatility, the product is ideal for high-performance computing (HPC), data centers and industrial computing such as programmable logic controllers (PLCs), human machine interface (HMI) and RAID controllers. (Fig.2)
The MB85RQ8MLX is a non-volatile memory with 8Mbit memory density and operates at a low power supply voltage from 1.7V to 1.95V. This new Quad SPI interface FeRAM achieves 54MB/s data reading/writing speed with four I/O pins and 108MHz operating frequency. It is more than 8 times faster than the other SPI interface FeRAM product operating at 50MHz, which transfers data at 6.25MB/s.
In industrial computing, electronic components are required to be guaranteed to operate in high temperature environments as ambient temperatures in computing units increase due to high-speed data processing. This new FeRAM has extended the upper limit on the operating temperature range from 85°C of general products to 105°C to satisfy the critical requirement in industrial usage. In addition to this MB85RQ8MLX, the other 8Mbit Quad SPI FeRAM product, which operates at power supply voltage from 2.7V to 3.6V, is under development.
The new FeRAM, MB85RQ8MLX, does not need any data-backup battery and brings customers using low-power SRAM as a buffer the computing cost benefit of eliminating the battery.
In addition, FeRAM is a non-volatile memory product with superior features of fast writing speed, high read/write endurance and low power consumption compared with conventional non-volatile memory such as flash memory and EEPROM. Our FeRAM products can solve following issues arising from the use of flash memory, EEPROM, or low-power SRAM. (Fig.3)
Fig.3：Customers’ Issues and Solutions
Case 1: Use of flash memory
- Issue: Large software development burden due to lower write endurance
- Solution: Eliminating the need for developing software for wear leveling development by use of FeRAM with high read/write endurance
Case 2: Use of EEPROM
- Issue: Long data-writing time
- Solution: Reducing data-writing time by use of FeRAM featuring fast writing operation
Case 3: Use of low-power SRAM
- Issue: Use and extra cost of data-backup battery
- Solution: No use of the battery as FeRAM of non-volatile memory provides 54MB/s data transfer speed
With the introduction of MB85RQ8MLX, Fujitsu Semiconductor Memory Solution now has three types of 8Mbit memory products. (Fig.4) Different features are required by customers’ end-products and, having three types of 8Mbit products, we are proud of now being able to serve a wide variety of customer needs.
Fujitsu Semiconductor Memory Solution continues to develop memory products to enhance functions of customers’ end-products.
Fig.4：8Mbit Memory Product Family
|Density (configuration)||8Mbit (1M x 8bit)|
|Interface||SPI interface (SPI, Dual SPI, Quad SPI)|
|Operating voltage||1.7V to 1.95V|
|Operating temperature range||-40°C to +105°C|
|Read/Write endurance||10 trillion times (1013 times)|
|Low power consumption||Operation current: 18mA (max.)
Standby current: 180μA (max.)
Glossary and Notes
- * FeRAM:Ferroelectric Random Access Memory
Ferroelectric random-access memory. A type of memory that uses a ferroelectric file as capacitors that store data. Retains contents even when power is removed. Combines benefits of both ROM and RAM, with fast write speed, low-power consumption, and high read/write cycle endurance. Produced by Fujitsu Semiconductor Memory Solution since 1999.
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About Fujitsu Semiconductor Memory Solution Limited
Fujitsu Semiconductor Memory Solution focuses on high-quality and highly reliable non-volatile memory like Ferroelectric Random Access Memory (FeRAM) and Resistive Random Access Memory (ReRAM). Headquartered in Yokohama, we were established as a subsidiary of Fujitsu Semiconductor Limited on March 31, 2020. Through our global sales and development network, with sites in Japan and throughout Asia, Europe, and the Americas, we offer semiconductor memory solutions to the global marketplace. For more information, please see: https://www.fujitsu.com/jp/fsm/en/
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