PRESS RELEASE
November 17, 2021
Fujitsu Semiconductor Memory Solution Limited
Fujitsu Launches New 8Mbit FeRAM Guaranteeing Writing Endurance up to 100 Trillion Times
Non-volatile Memory IC, Ideal for Industrial Machines, Achieving Both High-speed Operation and Low Power Consumption
Yokohama, Japan, November 17, 2021 - Fujitsu Semiconductor Memory Solution Limited has launched new 8Mbit FeRAM MB85R8M2TA with parallel interface, which is the first product to guarantee 100 trillion read/write cycle times in Fujitsu’s FeRAM product family. Evaluation samples are currently available.(Fig.1)
The new product achieves both high-speed operations, approximately 30% faster access speed, and low power consumption, 10% less operating current, compared to Fujitsu’s conventional products. This memory IC is an ideal replacement of SRAM in the industrial machines that require high-speed operation.(Fig.2)
FeRAM is a non-volatile memory product with superior features of high read/write endurance, fast writing speed operation and low power consumption, and it has been mass-produced for over 20 years.
Fujitsu has been providing 8Mbit FeRAM MB85R8M2T with parallel interface since June 2018. While promoting the product, the company heard voices of customer requirements such as guaranteed writing endurance of more than 10 trillion times, operation as fast as SRAM and TSOP package compatibility to SRAM. Fujitsu is now pleased to introduce its new 8Mbit FeRAM product satisfying these requirements, maintaining FeRAM’s unique feature of lower power consumption.
The MB85R8M2TA with an SRAM-compatible parallel interface operates at a wide range of power supply voltage from 1.8V to 3.6V. It is the first product that guarantees 100 trillion read/write cycle times in Fujitsu’s FeRAM product family.
Being capable of operating up to 25ns in fast page mode, the new FeRAM’s access speed is as high as SRAM at continuous data transfer. It achieves not only higher-speed operation but lower power consumption than Fujitsu’s conventional FeRAM product. This FeRAM has the maximum write current of 18mA, 10% less than the current product, and the maximum standby current of 150µA, 50% less.(Fig.3) It is housed in a 44-pin TSOP package which is the same package as Fujitsu’s 4Mbit FeRAM in addition to a 48-pin FBGA package.
Fig.1: MB85R8M2TA Packages
Fig.2: Example of FeRAM Usage
Fig.3: Current Comparison
The new 8Mbit FeRAM brings customers the benefit of eliminating a data-backup battery necessary for SRAM in some cases. Fujitsu’s FeRAM product can solve the following issues arising from replacing SRAM with non-volatile memory.(Fig.4)
- Issue: Additional work to change interface design and PCB design
Solution: Use of FeRAM compatible with SRAM interface and SRAM package - Issue: Difficult to replace with non-volatile memory of very slow writing speed
Solution: Use of FeRAM featuring fast writing operation as a maximum 25ns in page mode - Issue: Design restriction due to writing endurance up to 10 trillion times
Solution: Use of FeRAM with writing endurance up to 100 trillion times
Fig.4: Issues and solutions when replacing SRAM with non-volatile memory
Fujitsu Semiconductor Memory Solution is committed to contribution to sustainable society while developing high-performance products. As an example, the company continues working on the development of low-power consumption FeRAM products. With the reduction of power consumption, it aims to reduce CO2 emissions for less greenhouse gas.
Fujitsu will continue to satisfy the needs and requirements from the market and customers and also develop eco-friendly memory products.
Key Specifications
| Part Number | MB85R8M2TA |
|---|---|
| Density (configuration) | 8Mbit (512K x 16bit) |
| Interface | Parallel Interface (low power SRAM compatible) |
| Operating voltage | 1.8V to 3.6V |
| Operating temperature range | -40°C to +85°C |
| Read/Write endurance | 100 trillion (1014) times |
| Package | 48-pin FBGA, 44-pin TSOP |
| Low power consumption | Operation current: 18mA (max.)
Standby current: 150µA (max.) Sleep current: 10µA (max.) |
Glossary and Notes
- * FeRAM:Ferroelectric Random Access Memory
Ferroelectric random-access memory. A type of memory that uses a ferroelectric file as capacitors that store data. Retains contents even when power is removed. Combines benefits of both ROM and RAM, with fast write speed, low-power consumption, and high read/write cycle endurance. Produced by Fujitsu Semiconductor Memory Solution since 1999.
MB85R8M2TA(512Kx16) datasheetAbout Fujitsu Semiconductor Memory Solution Limited
Fujitsu Semiconductor Memory Solution focuses on high-quality and highly reliable non-volatile memory like Ferroelectric Random Access Memory (FeRAM) and Resistive Random Access Memory (ReRAM). Headquartered in Yokohama, we were established as a subsidiary of Fujitsu Semiconductor Limited on March 31, 2020. Through our global sales and development network, with sites in Japan and throughout Asia, Europe, and the Americas, we offer semiconductor memory solutions to the global marketplace. For more information, please see: https://www.fujitsu.com/jp/fsm/en/
Contacts
Fujitsu Semiconductor Memory Solution Limited
Marketing Division
Company and product names mentioned herein are trademarks or registered trademarks of their respective companies. Information provided in this press release is accurate at time of publication and subject to change without advance notice.
