PRESS RELEASE

July 16, 2020
Fujitsu Semiconductor Memory Solution Limited

Fujitsu has launched a 4Mbit FRAM with a guaranteed operation up to 125℃

Non-volatile memory optimal for applications in automobiles and industrial machinery that require high reliability in high-temperature environments

Yokohama, Japan, July 16, 2020 – Fujitsu Semiconductor Memory Solution Limited today announced a launch of 4Mbit FRAM * MB85RS4MTY, which has the largest density in FRAM products operating up to 125℃. Evaluation samples are currently available.

This new FRAM product is a non-volatile memory that guarantees 10 trillion read/write cycle times and low active currents under the 125℃ high-temperature environment. It is optimal for industrial robots and automotive applications such as advanced driver-assistance systems (ADAS).

日本語

FRAM is a non-volatile memory product with features of higher read/write endurance, faster writing speed operation and lower power consumption compared to EEPROM and flash memory. FRAM products have been mass-produced for over 20 years and adopted in wearable devices, industrial robots, and drones in recent years.

While the 2Mbit FRAM MB85RS2MTY has been well received for the applications for automobiles and industrial equipment since its release last year, the MB85RS4MTY has doubled the density to 4M bit to meet the demand for larger density and features an SPI interface which operates at a power supply voltage of wide range from 1.8V to 3.6V. Since this FRAM has low operating currents such as a maximum active current of 4mA (operated at 50MHz) and a maximum power-down current of 30µA even at a high temperature of 125℃, it contributes to reducing power consumption of environmentally conscious applications.

The new FRAM guarantees 10 trillion read/write cycle times in the temperature range from -40℃ to +125℃. This characteristic is optimal for some applications that require real-time data logging. For instance, data can be recorded at the same address for 10 years even when the data is rewritten at every 0.03 milliseconds.

This FRAM product is housed in an 8-pin SOP package, making it easy to replace existing EEPROM that has a similar footprint. In addition, 8-pin DFN (Dual Flatpack No-leaded) package is also available.

Fig1: MB85RS4MTY 8-pin DFN (Top・Bottom)

Fig2: Example of applications suited for FRAM

Fujitsu Semiconductor Memory Solution Limited will continue to supply memory products and solutions for improvement in value and convenience of customers' products.

Key Specifications

Part Number:MB85RS4MTY
Density (configuration):4Mbit (512K x 8bit)
Interface:SPI (Serial Peripheral Interface)
Operating frequency:50MHz maximum
Operating voltage:1.8V to 3.6V
Operating temperature range:-40°C to +125°C
Read/Write endurance:10 trillion times (1013 times)
Package:8-pin DFN, 8-pin SOP

Glossary and Notes

  • * FRAM:
    Ferroelectric Random Access Memory
    Ferroelectric random-access memory. A type of memory that uses a ferroelectric file as capacitors that store data. Retains contents even when power is removed. Combines benefits of both ROM and RAM, with fast write speed, low-power consumption, and high read/write cycle endurance. Also known as FeRAM. Produced by Fujitsu Semiconductor Memory Solution since 1999.

About Fujitsu Semiconductor Memory Solution Limited
Fujitsu Semiconductor Memory Solution focuses on high-quality and highly reliable non-volatile memory like Ferroelectric Random Access Memory (FRAM) and Resistive Random Access Memory (ReRAM). Headquartered in Yokohama, we were established as a subsidiary of Fujitsu Semiconductor Limited on March 31, 2020. Through our global sales and development network, with sites in Japan and throughout Asia, Europe, and the Americas, we offer semiconductor memory solutions to the global marketplace. For more information, please see: https://www.fujitsu.com/jp/fsm/en/

Customer Contacts

Fujitsu Semiconductor Memory Solution Limited
Marketing Division


Company and product names mentioned herein are trademarks or registered trademarks of their respective companies. Information provided in this press release is accurate at time of publication and subject to change without advance notice.

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