Fujitsu Licenses MoSys IT-SRAM®Technology for its Leading-Edge 65nm Semiconductor Manufacturing Process

MoSys, Inc. [NASDAQ: MOSY], the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions, and Fujitsu Limited [TSE:6702], a leading provider of customer-focused IT and communications solutions for the global marketplace, announced today an agreement under which MoSys' IT-SRAM®technology is licensed to Fujitsu on its advanced 65 nanometer (nm) production process.

The companies' partnership already covers the 0.13-micron and 90nm semiconductor technologies. With the implementation of MoSys-patented 1T-SRAM memory technology and IT-Q bit cell to Fujitsu's 65nm process, Fujitsu is able to offer complex SoCs, that have a fraction of the die area devoted to embedded memory compared to other competing embedded memory technologies, while maintaining very high performance with extremely low power consumption. The cost savings derived from the smaller embedded memory die area can be allocated to other various uses, such as increasing functionality at the same cost, or significantly reducing unit costs while maintaining the same functionality.

"Since partnering with MoSys, Fujitsu has acquired much experience in the design and manufacturing methodologies of 1T-SRAM-Q technology. We feel this is one of the best embedded memory solutions on 65nm technology," said Kimiaki Satoh, General Manager of the FCRAM Division, Electronic Devices Group of Fujitsu Limited. "Fujitsu already has its own advanced 65nm technology. By having 1T-SRAM-Q based memory macros available on our cutting-edge technology, we can empower our customers by enabling them to meet some of the most demanding challenges of future silicon products - achieving cost competitiveness while maintaining higher performance. We accomplish these goals without sacrificing memory density and speed."

“We are very pleased to reach this agreement with Fujitsu which sets an important milestone in validating MoSys patented technologies at the most advanced process node,” said Chet Silvestri, chief executive officer at MoSys, Inc. “By adopting MoSys 1T-SRAM technology for its 65 nm products, Fujitsu can use the extensive experience developed on the 0.13-micron and 90 nm processes to provide optimized solutions for its customer base and provides momentum for scaling below 65 nm in the future.”

Fujitsu is currently constructing its second 300mm fab, which will support leading-edge 65nm process technologies, and continues to move forward with developments with its cutting-edge technology partners worldwide. In addition to maximizing and further enhancing the advantages of its 65nm process technologies - fast speed with low power consumption, Fujitsu plans to enrich its design methodology offerings.