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[1] Ferroelectric Random Access Memory (FRAM)
Non-volatile memory that uses a ferroelectric film on the capacitor for data retention. This memory technology features advantages of both ROM and RAM, such as high-speed data read/write functions, low power consumption, and virtually unlimited read/write cycles.
[2] Non-volatile memory
Memory that retains data even when a device is switched off.
[3] Flash memory
Read-only non-volatile memory capable of being erased and rewritten in blocks (sectors).
[4] Electrically Erasable and Programmable Read Only Memory (EEPROM)
Read only non-volatile memory capable of being erased and rewritten electrically.
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Customer Contacts
FRAM Products & Solutions Marketing Dept.
E-mail: edevice@fujitsu.com
Company:Fujitsu Limited
Press Contacts
Public Relations and Brand Strategy
Website:http://www.epson.co.jp/e/
Company:Seiko Epson Corp.
FRAM is a registered trademark of Ramtron International Corporation (U.S.). All other product names and proper names mentioned are trademarks or registered trademarks of their respective companies.
Date: 15 June, 2005
City: Tokyo
Company:
Fujitsu Limited,
Seiko Epson Corporation,
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