Gallium nitride (GaN)
A wide band-gap semiconductor material that features a higher breakdown-voltage (threshold) than conventional semiconductor materials, such as silicon (Si)- or gallium-arsenide (GaAs).
 High electron mobility transistor (HEMT)
A field-effect transistor that takes advantage of operation of the electron layer at the boundary between different semiconductor materials that is relatively rapid compared to that within conventional semiconductors. Fujitsu led the industry with its development of HEMT technology in 1980, and the technology now underpins much of today's fundamental IT infrastructure, including satellite transceivers, wireless equipment, GPS-based navigation systems, and broadband wireless networking systems.
 Room Temperature Bonding
A technology in which surfaces of different materials are cleaned in a vacuum by an argon beam and bonded at room temperature. Also known as surface activated bonding. This can bond materials that have different coefficients of thermal expansion. https://www.fujitsu.com/global/about/resources/news/press-releases/2017/1207-01.html
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Founded in 1968 as a wholly owned subsidiary of Fujitsu Limited, Fujitsu Laboratories Ltd. is one of the premier research centers in the world. With a global network of laboratories in Japan, China, the United States and Europe, the organization conducts a wide range of basic and applied research in the areas of Next-generation Services, Computer Servers, Networks, Electronic Devices and Advanced Materials. For more information, please see: http://www.fujitsu.com/jp/group/labs/en/.
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Company:Fujitsu Laboratories Ltd.
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All company or product names mentioned herein are trademarks or registered trademarks of their respective owners. Information provided in this press release is accurate at time of publication and is subject to change without advance notice.
Date: 05 December, 2019
Company: Fujitsu Limited ,Fujitsu Laboratories Limited
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