Spin-Torque-Transfer MRAM
Spin Torque Transfer Magnetoresistive Random Access Memory. This is MRAM that uses the "spin-torque-transfer" effect to reverse the magnetic polarity of a magnetic material, by passing a current through it.
 Magnetic tunnel junction (MTJ)
A tunnel junction that has the magnetoresistive effect. It consists of a recording layer made of strong magnetic material, an insulating film that is a few atoms thick, and a layer made of strong magnetic material that will not change its magnetic orientation in the presence of a current.
 Non-volatile memory
Memory that persists in the absence of electrical power.
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Date: 17 June, 2010
City: Kawasaki, Japan
Company: Fujitsu Laboratories Ltd., , , , ,
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