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 Quantum dot lasers
A semiconductor laser in which a quantum dot, which is a 3-dimensional nanostructure, is used as an active material for lasing. Its quantum effects allow it to operate without being dependent on temperature, thus making it possible to significantly reduce fluctuations in optical output that are attributable to temperature changes.
 Optical sources for next-generation high-speed communications
In order to achieve a transmission speed of 100 Gbps, for distances of 10km to 40km, an international standard is being promoted for a transmission method using a fiber to carry four optical signals, each operating at 25 Gbps and multiplexed together.
 International standard
100 Gigbit Ethernet (100GbE) is being promoted by the Institutue of Electrical and Electronic Engineers (IEEE) as a standard for Ethernet that can transmit at speeds of 100 Gbps.
 Quantum well lasers
A type of semiconductor laser in which thin layers - about several nanometers thick - sandwiched between wide bandgap layers are employed as active layers. These thin layers are referred to as quantum well layers. In such structures, confinement of electrons in the quantum well layers improves laser performance, and they are widely used as light source in many applications. However, quantum well lasers used in optical fiber communications are highly sensitive to temperature.
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Date: 20 May, 2010
City: Tokyo and Kawasaki, Japan
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