X band
Name for the frequency band from 8 GHz to 12 GHz. Has less interference and crosstalk, and is not susceptible to jamming. Used in satellite communications, air-traffic control radar, weather radar, etc.
With direct DC input power, this expresses the difference between high-frequency output power and high-frequency input power, or the ratio that is converted to amplified output. It is an index expressing the rate at which DC power supplied to an amplifier is converted to high-frequency output in the form of an output signal.
 Gallium nitride
Used in wide band-gap semiconductors as an alternative to silicon or gallium arsenide. Features high tolerance against breakdown attributable to high voltage.
 High electron-mobility transistor (HEMT)
A field-effect transistor that takes advantage of operation of the electron layer at the boundary between different semiconductor materials, that is relatively rapid compared to that within conventional semiconductors. This transistor was invented in 1979 by Dr. Takashi Mimura and Fujitsu led the industry with its development of HEMT technology in 1980, and it is currently used in a number of IT applications, including satellite transceivers, cellular equipment, GPS-based navigation systems, and broadband wireless networking systems.
 C band
Name for the frequency band from 4 GHz to 8 GHz; prone to attenuation by rain and fog. Used in satellite communications, fixed-point wireless access, wireless access, air-traffic control radar, weather radar, etc.
 Traveling-wave tube amplifiers
A type of vacuum tube used to amplify microwaves. It creates an electron beam that travels at roughly the same speed as the microwave's phase velocity. Speed and density adjustments to that electron beam amplify the microwave, through mutual interaction between the two.
 Solid-state device amplifier
An amplifier that uses semiconductors made of silicon, gallium arsenide, etc. as active elements.
An index of the ratio between output power and input power (output power divided by input power). Expresses the rate of input-power amplification.
Founded in 1968 as a wholly owned subsidiary of Fujitsu Limited, Fujitsu Laboratories Limited is one of the premier research centers in the world. With a global network of laboratories in Japan, China, the United States and Europe, the organization conducts a wide range of basic and applied research in the areas of Multimedia, Personal Systems, Networks, Peripherals, Advanced Materials and Electronic Devices. For more information, please see:http://jp.fujitsu.com/group/labs/en/
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Company and product names referenced herein are trademarks or registered trademarks of their respective owners. Information provided in this press release is accurate at time of issue and is subject to change without advance notice.
Date: 12 June, 2009
City: Kawasaki, Japan
Company: Fujitsu Laboratories Ltd., , , , ,
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