CMOS technology
CMOS stands for complementary metal-oxide semiconductor. CMOS technology involves production in which negative-channel metal-oxide semiconductor (NMOS) transistors - which use electrons to carry a charge, and positive-channel metal-oxide semiconductor (PMOS) transistors – which employ "holes" that are sections lacking from electrons, are mixed on a silicon substrate. In order to increase the operating speed of CMOS circuits, the operating speed performance of both NMOS and PMOS transistors must be increased.
 Crystal surface
Refers to the orientation of the atomic arrangement of a crystal. Because crystals such as silicon are cubic, the orientation of each surface is expressed utilizing the x, y, and z axis. For silicon, past research has primarily been conducted on the physical properties of the (001), (110), and (111) surfaces.
Current flowing through a transistor when it is on. By increasing mobility through the channel (below the gate), increasing the number of electrons (or "holes"), and reducing the parasitic resistance, on-current can be increased. The greater the on-current, the faster the operation.
 Strain technology
Technology for increasing mobility, by adding strain (stress) to the transistor.
 High-k technology
Technology that employs materials featuring higher dielectric constants than silicon dioxide, to increase channel electrons (or "holes") in gate-insulating layers.
 Metal gate technology
Technology that incorporates metal to suppress the spread of the depletion layer appearing at the boundary with the gate insulating layer - an issue that is prevalent when typical polysilicon is used, and to increase channel electrons (or "holes").
 Isolation region
A region in which individual transistors are electrically isolated.
A compound substance made of silicon and high-melting metal. Used widely in logic LSIs to reduce parasitic resistance.
 Contact resistance
This refers to contact resistance between silicon and silicide. Current transistors employ reduction of contact resistance, in order to lower parasitic resistance and to improve on-current.
Founded in 1968 as a wholly owned subsidiary of Fujitsu Limited, Fujitsu Laboratories Limited is one of the premier research centers in the world. With a global network of laboratories in Japan, China, the United States and Europe, the organization conducts a wide range of basic and applied research in the areas of Multimedia, Personal Systems, Networks, Peripherals, Advanced Materials and Electronic Devices. For more information, please see:http://jp.fujitsu.com/group/labs/en/
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Date: 16 December, 2008
City: Kawasaki, Japan
Company: Fujitsu Laboratories Ltd., , , , ,
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