Gallium nitride (GaN)
A wide band-gap semiconductor that features stronger resistance against breakdowns that can occur due to high voltages, compared to conventional semiconductors based on silicon (Si) or gallium arsenide (GaAs).
 High electron mobility transistor (HEMT)
Invented in 1979 by Takashi Mimura of Fujitsu Laboratories (currently a Fellow at Fujitsu Laboratories), this is a transistor made of compound semiconductors that features excellent operating speed and low noise characteristics. Fujitsu led the industry with its development of the HEMT in 1980, and the technology now underpins much of today's fundamental IT infrastructure, including satellite transceivers, wireless equipment, GPS-based navigation systems, and broadband wireless networking systems.
Name for the frequency band from 4 to 8 GHz. This band is relatively unaffected by rainfall and fog. Applications include satellite communications, fixed wireless communications, wireless access, air-traffic control radar, and weather radar.
Name for the frequency band from 8GHz to 12GHz. Its characteristics include low susceptibility to interference and it is difficult to jam. The X-band is widely used in satellite communications, air traffic control radar, and weather radar systems.
Index that expresses the ratio of direct current (DC) input power converted to high-frequency output power.
 Matching circuit
A circuit that equalizes an output circuit's load with the receiving-side circuit's input load, to maximize the power generated in an electrical signal transmission path.
 Dielectric breakdown field
Index that expresses the strength of an electrical field, at which current flows through an insulator.
Founded in 1968 as a wholly owned subsidiary of Fujitsu Limited, Fujitsu Laboratories Limited is one of the premier research centers in the world. With a global network of laboratories in Japan, China, the United States and Europe, the organization conducts a wide range of basic and applied research in the areas of Multimedia, Personal Systems, Networks, Peripherals, Advanced Materials and Electronic Devices. For more information, please see:http://jp.fujitsu.com/group/labs/en/
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Company:Fujitsu Laboratories Limited
Company and product names referenced herein are trademarks or registered trademarks of their respective owners. Information provided in this press release is accurate at time of publication and is subject to change without advance notice.
Date: 04 November, 2008
City: Kawasaki, Japan
Company: Fujitsu Laboratories Ltd., , , , ,
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