Gallium nitride (GaN)
A wide band-gap semiconductor that features stronger resistance against breakdowns that can occur due to high voltages, compared to conventional semiconductors based on silicon (Si) or gallium arsenide (GaAs).
 High electron mobility transistor (HEMT)
Invented in 1979 by Takashi Mimura of Fujitsu Laboratories (currently a Fellow at Fujitsu Laboratories), this is a transistor made of compound semiconductors that features excellent operating speed and low noise characteristics. Fujitsu led the industry with its development of the HEMT in 1980, and the technology now underpins much of today's fundamental IT infrastructure, including satellite transceivers, wireless equipment, GPS-based navigation systems, and broadband wireless networking systems.
Name for the frequency band from 4 to 8 GHz. This band is relatively unaffected by rainfall and fog. Applications include satellite communications, fixed wireless communications, wireless access, air-traffic control radar, and weather radar.
An index that expresses the ratio of DC input power converted to high-frequency output power.
 Traveling-wave tube amplifier
A type of vacuum tube used to amplify microwaves. It creates an electron beam that travels at approximately the same speed as the microwave's phase velocity, modulating the speed and density of the electron beam, and amplifying the microwave through a synergistic action between the two.
Refers to electromagnetic waves with frequencies between 30 MHz and 30 GHz.
 Solid-state amplifier
An amplifier constructed with silicon- (Si) or gallium arsenide- (GaAs) based semiconductors as active elements.
Founded in 1968 as a wholly owned subsidiary of Fujitsu Limited, Fujitsu Laboratories Limited is one of the premier research centers in the world. With a global network of laboratories in Japan, China, the United States and Europe, the organization conducts a wide range of basic and applied research in the areas of Multimedia, Personal Systems, Networks, Peripherals, Advanced Materials and Electronic Devices. For more information, please see:http://jp.fujitsu.com/group/labs/en/
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Company and product names referenced herein are trademarks or registered trademarks of their respective owners. Information provided in this press release is accurate at time of publication and is subject to change without advance notice.
Date: 21 October, 2008
City: Kawasaki, Japan
Company: Fujitsu Laboratories Ltd., , , , ,
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