Complementary metal-oxide semiconductor.
Negative-channel metal-oxide semiconductor.
Positive-channel metal-oxide semiconductor.
 Nickel silicide
Silicide is a chemical compound consisting of silicon and a high-melting-point metal such as cobalt or titanium in addition to nickel.
 Fully silicided
A gate structure in which the whole gate electrode is made of silicide.
Decrease in the number of free carriers in the section bordering the gate oxide film within the gate electrode when applying gate voltage. Electrically speaking, it is equivalent to an increase in the thickness of the gate oxide film, which causes a decrease in on-current.
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Date: 17 June, 2008
City: Kawasaki and Tokyo
Company: Fujitsu Laboratories Ltd., Fujitsu Microelectronics Limited, , , ,
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