Gallium nitride
A type of wide band-gap semiconductor that is more resistant to breakdown at a given voltage than conventional semiconductors, such as silicon or gallium arsenide.
 High electron-mobility transistor (HEMT)
A field-effect transistor that takes advantage of operation of the electron layer at the boundary between different semiconductor materials that is relatively rapid compared to that within conventional semiconductors. Fujitsu led the industry with its development of HEMT technology in 1980, and the technology now underpins much of today's fundamental IT infrastructure, including satellite transceivers, wireless equipment, GPS-based navigation systems, and broadband wireless networking systems.
 Insulated gate
A gate design that is extremely difficult for current to pass through. Silicon nitride or silicon oxide is typically used as the insulating film.
 Interface trap level
A potential arising from the contact between an insulator and semiconductor, or metal and semiconductor. Complicates current control by capturing and emitting electrons.
 Distortion-compensation circuit
Applies an inverted distortion at the source to a distorted signal, using a technique known as digital pre-distortion (DPD).
 Outpower leakage into adjacent channel leakage power
When a signal is applied, output power will leak into adjacent channels, causing interference and impeding communications.
Founded in 1968 as a wholly owned subsidiary of Fujitsu Limited, Fujitsu Laboratories Limited is one of the premier research centers in the world. With a global network of laboratories in Japan, China, the United States and Europe, the organization conducts a wide range of basic and applied research in the areas of Multimedia, Personal Systems, Networks, Peripherals, Advanced Materials and Electronic Devices. For more information, please see:http://jp.fujitsu.com/group/labs/en/
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Date: 05 December, 2005
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