Fujitsu is a leading provider of customer-focused IT and communications solutions for the global marketplace. Pace-setting technologies, highly reliable computing and telecommunications platforms, and a worldwide corps of systems and services experts uniquely position Fujitsu to deliver comprehensive solutions that open up infinite possibilities for its customers' success. Headquartered in Tokyo, Fujitsu Limited (TSE:6702) reported consolidated revenues of 4.6 trillion yen (US$38 billion) for the fiscal year ended March 31, 2003.
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1T-SRAM-Q achieves its exceptional density by using bit cells of just 0.5 micron2 in the 0.13-micron logic process. Using only one additional, non-critical mask on the standard logic process, 1T-SRAM-Q enables cost-effective integration of large amounts of embedded memory on SoC designs without any change to the other logic IP blocks or libraries. 1T-SRAM-Q incorporates MoSys' proprietary Transparent Error CorrectionTM (TECTM) technology delivering the additional benefits of improved yield and reliability with elimination of laser repair and soft error concerns.
Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs, while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085.
For more information, please see: www.mosys.com
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1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.
Date: 26 January, 2004
City: Tokyo, Japan / Sunnyvale, CA, USA
Company: Fujitsu Limited, MoSys, Inc., , , ,
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