A type of wide band-gap semiconductor that is more resistant to breakdown at a given voltage than conventional semiconductors, such as gallium arsenide and silicon.
A field-effect transistor that takes advantage of operation of the electron layer at the boundary between different semiconductor materials that is relatively rapid compared to that within conventional semiconductors. Fujitsu led the industry with its development of HEMT technology in 1980, and the technology now underpins much of today's fundamental IT infrastructure, including satellite transceivers, wireless equipment, GPS-based navigation systems, and broadband wireless networking systems.
 distortion compensation circuits
Fujitsu's distortion compensation technology is based on the Digital Pre-Distortion (DPD) method, which adds compensatory characteristics to the signal before distortion occurs. Fujitsu has incorporated this technology into a distortion-compensation LSI.
 maximum power-added efficiency
A ratio indicating the conversion efficiency of direct current as an output signal supplied to an amplifier, converted to high-frequency power.
A 3G wireless standard, enabling flexible, high-speed data transmission. Also known as wide code-division multiple access, it permits multiplexed, distributed communications for multiple simultaneous users using spread encoding. Because multiple users can use the same frequency at the same time, this makes for an efficient use of spectrum. W-CDMA is one form of CDMA technology.
 adjacent channel leakage
A ratio that indicates the degree to which signals of adjacent channels are affected, due to amplifier distortion. As one of the critical specifications for amplifiers, the 3G system specification is much more stringent than that of the 2G base station.
 drain efficiency
A ratio indicating the conversion efficiency of direct current as an output signal supplied to an amplifier, converted to high-frequency power. For 3G base stations, output should not be at maximum power-added efficiency levels, but rather should be kept at an average power that satisfies the specification requirements for distortion (roughly 1/6th maximum power). The drain efficiency at this power level is an important specification for 3G base station amplifiers.
Founded in 1968 as wholly owned subsidiary of Fujitsu Limited, Fujitsu Laboratories Limited is one of the premier research centers in the world. With a global network of laboratories in Japan, China, the United States and Europe, the organization conducts a wide range of basic and applied research in the areas of Multimedia, Personal Systems, Networks, Peripherals, Advanced Materials and Electronic Devices.
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Date: 08 December, 2003
Company: Fujitsu Laboratories Ltd., , , , ,
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