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  7. Fujitsu Introduces 128Mbit Mobile FCRAM with Burst Mode Operation

Fujitsu Introduces 128Mbit Mobile FCRAM with Burst Mode Operation

Features high-density, high-speed pseudo SRAM

Fujitsu Limited

Tokyo, August 21, 2003

Fujitsu Limited today announced the availability of a new 128Mbit Mobile Fast Cycle RAMTM(1) device for mobile phone applications. The new Mobile FCRAM, the MB82DBR08163, adopts burst mode operations compliant with the Common Specifications for Mobile RAM(2). The device's high-speed performance and large density make it ideal for 3G cellular phone vendors looking to provide advanced applications.


The 128Mbit memory density meets the increased storage needs of next generation cellular phone applications. In addition, burst mode operation provides a clock access time of 12 nanoseconds (@ 66 MHz), enabling continuous read or write operations. By combining high access speed and high density, the new device is well suited to deliver advanced applications to 3G networks that support multimedia functions such as video data streaming.

The MB82DBR08163 comes in a 71-pin FBGA package, and is also available in either chip or wafer form to accommodate special mounting requirements.

Fujitsu plans to extend its Mobile FCRAM line of 1.8V single power source products and increase burst frequencies to 80MHz and 100MHz.

Sample Pricing and Availability
Pricing (excl tax): 2,000 yen (in Japan) Shipping: September 1, 2003

Product Features

  1. Large memory density
    - The 128Mbit density meets increased storage needs of today's cellular phones.

  2. High-speed access
    - Burst mode enables fast continuous read/write operations through synchronization of system clock.
    - 12-ns clock access time in burst mode (@ 66MHz).
    - Can read in page mode, asynchronous to the external clock. Maximum page access time is 20 ns.
  3. Low-power consumption
    - Maximum of 200 A of standby current.
    - User configurable power-down modes (sleep mode, partial power-down mode) dramatically cut standby current.
Main Specifications
Memory density 128Mbit
I/O configuration x16
Supply voltage 2.7-3.1V
I/O supply voltage 1.65-1.95V
Burst frequency (read latency: 5) 66MHz
Random-access time (max) 70 ns
Clock access time (max) 12 ns
Page access time (max) 20 ns
Active current (max) 35 mA
Standby current (max) 200 A
Powerdown current (max) 10 A
Packaging 71-pin FBGA

  • [1] RAMTM

    Fujitsu's unique core technology with features of high-speed and low power consumption. Mobile FCRAM is pseudo static RAM, with an SRAM interface on a FCRAM core.

  • [2] Common Specifications for Mobile RAM

    Common specifications for next generation mobile pseudo SRAM user interface announced by Fujitsu, NEC Electronics, and Toshiba on February 17, 2003.

About Fujitsu

Fujitsu is a leading provider of customer-focused IT and communications solutions for the global marketplace. Pace-setting technologies, highly reliable computing and telecommunications platforms, and a worldwide corps of systems and services experts uniquely position Fujitsu to deliver comprehensive solutions that open up infinite possibilities for its customers' success. Headquartered in Tokyo, Fujitsu Limited (TSE:6702) reported consolidated revenues of 4.6 trillion yen (US$38 billion) for the fiscal year ended March 31, 2003.  
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Press Contacts

Public & Investor Relations

Address: 1-5-2 Higashi-Shimbashi, Minato-ku, Tokyo Japan 105-7123

Phone: Phone: +81 (0) 3-6252-2176
Fax: +81 (0) 3-6252-2783
Company:Fujitsu Limited

Press Contacts

ASIC Marketing & Application Engineering Dept. ASIC, Network and Communication Products Div.A

Phone: Phone: +81-42-532-1416
E-mail: E-mail:
Company:FCRAM & ASSP AE, LSI Group

FCRAM is a trademark of Fujitsu Ltd. All other company/product names mentioned herein are trademarks or registered trademarks of their respective companies.

All company/product names mentioned may be trademarks or registered trademarks of their respective holders and are used for identification purpose only. Please understand that product prices, specifications and other details are current on the day of issue of the press release, however, may change thereafter without notice.

Date: 21 August, 2003
City: Tokyo
Company: Fujitsu Limited, , , , ,