ReRAM is a non-volatile memory technology featuring lowest power consumption in reading access while allowing random writing access. Based on this technology, considerable changes in resistance of the circuit can be created by applying a pulse voltage to a metal oxide thin film. And this change of resistance can be recorded as ones and zeros. 

This brand new memory technology is optimal for IoT, wearable devices and hearing aids applications


Part numberMemory DensityInterfacePower Supply VoltageOperating FrequencyOperating TemperatureRead Current (typ)Read CyclePackageSamples
MB85AS4MT (1v0)4MbitSPI1,65 - 3,6V5MHz-40 to +85°C0.2mAUnlimitedSOP-8FRAM samples eshop icon

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