ReRAM is a non-volatile memory technology featuring lowest power consumption in reading access while allowing random writing access. Based on this technology, considerable changes in resistance of the circuit can be created by applying a pulse voltage to a metal oxide thin film. And this change of resistance can be recorded as ones and zeros.
This brand new memory technology is optimal for IoT, wearable devices and hearing aids applications
|Part number||Memory Density||Interface||Power Supply Voltage||Operating Frequency||Operating Temperature||Read Current (typ)||Read Cycle||Package||Samples|
|MB85AS4MT (1v0)||4Mbit||SPI||1,65 - 3,6V||5MHz||-40 to +85°C||0.2mA||Unlimited||SOP-8|