Reliability

Fujitsu Semiconductor ensures a consistent high reliability of FRAM products through evaluating Test Element Group (TEG) and products, especially in respect of data retention and fatigue characteristics.

Please find more information on FRAM’s quality and reliability here (1.17 MB ).

Technology of Production and Development

Fujitsu controls whole processes of FRAM: research, development and mass production.
Since the first mass production in 1999, we have been producing and shipping a great number of FRAM products. The fact that Fujitsu has research, development, production (including wafer process and assembly) all processes in-house, ensures a high quality control and a seamless logistic supply chain. Especially this can be achieved through our own technologies such as Fujitsu original ferroelectric film forming technology, ferroelectric capacitor processing technology and degradation control technology of ferroelectric capacitor.

Documentation & Downloads

Factsheets

Datasheets

Datasheets for the standalone FRAM products can be found here
Datasheets for the RFID FRAM products can be found here.

Videos

Videos on our FRAM solutions can be found here.

FAQs

FRAM Outline

Comparing with Other Memories

SRAM

EEPROM, Flash memory

FRAM Characteristics, Specs, Support

Read/Write Cycles

Data Retention

Others

FRAM Outline

What is FRAM?

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses a ferroelectric film as a capacitor to store data. FRAM combines the benefits of both ROM (Read Only Memory) and RAM (Random Access Memory), and features faster write, great read/write cycle endurance, and low power consumption. Please visit our website on FRAM products in detail.

Has FRAM already been used in any applications today?

Yes. Since mass production of FRAM started in 1999, Fujitsu Semiconductor has been assuring high quality and stable supply of FRAM products to our valued customers for over a decade.

What kind of applications have adopted FRAM?

FRAM has been adopted in applications that require memory in small densities and with capabilities of frequent writing. Examples of these applications are: Office equipment such as MultiFunction Printers for counter and print record, Factory Automation equipment such as measuring instruments and analyzers for parameter storage and data logging, financial terminals such as ATM for transaction history data, metering devices, car navigation systems and audio equipments. Please visit our website for other applications

I'm not familiar with FRAM. Does FRAM have any different control or operation compared to conventional memories?

FRAM products are not difficult to use, because FRAM products are compatible with standard memories such as EEPROM and low power SRAM. FRAM with serial interface (I2C, SPI) are compatible to serial EEPROM or serial flash memories. FRAMs with parallel interface can be used to replace low power SRAMs known as pseudo SRAMs or battery-backed-up SRAM.

Are FRAM devices affected by magnetic fields?

No. The prefix "ferro" of the term "ferroelectric", which has the meaning of "iron", often misleads people to the misunderstanding that FRAM are strongly affected by external magnetic field. This is a wrong understanding. In fact "Ferroelectricity" was historically coined in the analogy to ferromagnetism due to the phenomenon of hysteresis, which is similar for both materials. Nevertheless, Ferroelectricity does not contain "iron” or any ferromagnetic materials and has nothing to do with magnetism. While memory devices using ferromagnetic or antiferromagnetic elements, such as Fe, Co, Ni, Cr, etc., their related materials and/or compounds, are strongly affected by external magnetic field, Ferroelectric RAM devices are basically not affected by magnetic field because they do not use ferromagnetic or antiferromagnetic elements.

Do FRAM, F-RAM, and FeRAM refer to the same memory technology?

Yes. All FRAM, F-RAM, and FeRAM refer to the Ferroelectric Random Access Memory.

I'd like to evaluate FRAM samples. How or where can I get evaluation samples?

Please contact our sales offices or please request evaluation samples through the Inquiry Form on our website.

Where can I get the brochures, datasheets, or presentation materials for FRAM?

You can get FRAM documentation from here. Or, please contact our sales offices or please request the documentation through the enquiry form on our website.

Where are the locations of your production facilities?

Wafer process fab for FRAM is Fujitsu Semiconductor's FSET plant in Japan.

I'd like to know more details on FRAM. Can I have a meeting with Fujitsu Semiconductor?

Yes, with pleasure. Please contact our sales offices or please give us your requirements through the Inquiry Form on our website.

Is there any other company who manufactures and provides FRAM products?

Yes. There are other FRAM suppliers in the world.

Does Fujitsu plan to develop any FRAM products with RTC?

Regarding future development plan for our FRAM products, please contact our sales offices or please give us your inquiries and/or questions through the Inquiry Form on our website.

Comparing with Other Memories

SRAM

We're looking for pseudo SRAM or alternative solution. Is low power SRAM replaceable with parallel FRAM?

Yes. Since parallel FRAM products have a pseudo SRAM compatible interface, we can suggest to replace low power SRAM + back-up battery with FRAMs to achieve a simple system. Please note that some FRAM products with parallel interface are not fully-compatible with standard low power SRAM.
Please contact our sales offices or please give us your inquiries and/or questions through the Inquiry Form on our website.

EEPROM, Flash memory

Is FRAM price higher than EEPROM's?

Regarding pricing, please contact our sales offices or please give us your inquiries and/or questions through the Inquiry Form on our website.

Is EEPROM replaceable with FRAM?

Yes. Since FRAM product with serial interface, I2C and SPI, in 8-pin SOP packages are compatible with standard EEPROM in 8-pin SOP, EEPROM can be replaced with FRAM without any design change of routing and foot-print on PCB board.
If you have any interest in using FRAM in your applications, please contact our sales offices or please give us your inquiries and/or questions through the Inquiry Form on our website.

Is NAND Flash replaceable with FRAM?

Yes. Since FRAM products offer 10 trillion read/write cycle endurance, there are cases that some applications using NAND Flash memory with wear leveling can be replaced with much smaller FRAM products.
If you have any interest in using FRAM in your applications, please contact our sales offices or please give us your inquiries and/or questions through the Inquiry Form on our website.

How fast can FRAM execute write operations?

Write cycle times of non-volatile memories are specified in the specs as following:
FRAM = 150ns, EEPROM = 10ms, Flash memory = 10us. FRAM is ~70,000 times faster than EEPROM for write operation. EEPROM and Flash memory need byte- or sector- erase operations before writing, and it results in longer writing times. FRAM allows overwriting in the memory cells without erase operations.

What is serial memory? What is the difference between I²C and SPI interfaces?

Fujitsu Semiconductor defines the FRAM products with serial bus interface (I2C and SPI) as "serial memories" in our FRAM family.
Serial bus is a communication method to operate continuous data input and output by one bit, while parallel bus is another communication method to operate data input and output by multi-bit like 8-bit, 16-bit, and 32-bit at the same time.
The I2C interface is controlling data input/output using two signal lines, one"SCL" for clock control and one "SDA" for address and data control. SPI interface is using four signal lines: "SCK" for clock, "SI" for address and data input, "SO" for data output, and "CS" for chip select.
Since the serial bus can reduce the number of routing lines on a PCB compared to a parallel bus, the PCB board area of end-products can be reduced. Therefore, the design cost of serial bus can be less than that of parallel bus.

FRAM Characteristics, Specs, Supports

Read/Write Cycles

Fujitsu mentions 1 trillion times of read/write cycles guaranteed. The guaranteed value is applied to every bytes on chip, or a whole chip?

Endurance is ten trillion for each byte, not for the whole chip.

If only read operations are performed, can FRAM guarantee unlimited number of read cycles?

No, it's not unlimited. FRAM can guarantee ten trillion access times, regardless if it is read or write accesses.

Why are read operations of FRAM not unlimited?

After read operation, FRAM automatically writes back the same data to the cells again. Therefore, read operations are counted as one read/write cycle.

Data Retention

Other non-volatile memory suppliers mention data retention periods such as 35 years or more. Can Fujitsu guarantee longer data retention periods than 10 years?

Yes. Fujitsu Semiconductor can guarantee that under some conditions. Data retention period is affected by the environmental temperature in which the end-product is used. Our spec of data retention guarantees 10 years assuming that a customer uses our FRAM product at the worst case condition (max temperature). If a customer uses FRAM product in the end-product at lower temperatures, such as 25℃ or 60℃, Fujitsu can guarantee longer data retention period than 10 years based on theoretical calculations.
If you have further detailed request, please contact our sales offices or please give us your inquiries and/or questions through the Inquiry Form on our website.

Others

Can I get any IBIS simulation models of FRAM?

Regarding the request of IBIS simulation models, please contact our sales offices or please give us your inquiries and/or questions through the Inquiry Form on our website.

Is any special memory controller needed to use FRAM?

No. You can use standard memory controllers and MCUs. FRAM can be used for your system as standard memory.

Can Fujitsu tell us any concrete values showing the feature of "low power consumption"?

For example, comparing power consumption of EEPROM and FRAM (conditions of 2Mbit, SPI interface, 2Kbyte data write, 1sec, and 5MHz frequency), EEPROM consumes 5.80mJ while FRAM consumes 0.46mJ. Therefore, FRAM has one- thirteenth power consumption and 92% less power. In random-access scenarios the difference can be even much bigger.

Does FRAM violate the directive RoHS because FRAM contains lead (Pb) in the crystal structure?

No. FRAM doesn’t violate the directive RoHS. Since the lead (Pb) content in FRAM products is less than 1,000ppm, FRAM is conform to RoHS.

Is FRAM only available in SOP package types? Is there any plan to offer other package types?

In serial interface FRAM family, all products are in SOP package. In addition, 16Kbit FRAM has SON package and 2Mbit FRAM has DIP package. In parallel FRAM family, all products are in TSOP package. In addition, 256Kbit FRAM has SOP package.
In case you have other requests on package types, please contact our sales offices or please give us your inquiries and/or questions through the Inquiry Form on our website.

Can Fujitsu ship FRAM products in die or wafer form?

In case of special request for wafer or die business, please contact our sales offices or please give us your inquiries and/or questions through the Inquiry Form on our website.

In case of special request for wafer or die business, please contact our sales offices or please give us your inquiries and/or questions through the Inquiry Form on our website.

Contact Us

Find out how Fujitsu Electronics Europe can help you

Top of Page