Build better products with Fujitsu’s superior non-volatile memory solutions

FRAM (Ferroelectric Random Access Memory) is a unique memory solution that combines the best features of RAM and ROM. It significantly outperforms existing non-volatile memories like E2PROM and Flash by offering fast random writing access, high write cycle endurance and low power consumption. FRAM technology functions by utilizing ferroelectric material in the memory cells. Its outstanding features enable significant performance improvements, frequent data access and last data backup at sudden power outage for customer applications. 

Fujitsu began mass-producing FRAM technology in 1999 and was the first company to manage high volume production of this memory technology. Since this time we have shipped a large number of FRAM products worldwide, and have gained more experience in FRAM manufacturing than any other company.

With in-house development and manufacturing, we have been enabled to create a close link between product design and factory production. This close link allows us to produce and deliver substantial and high-quality products onto the market along with a highly stable supply chain.

Product features include:

• fast overwrite speed (30,000 times faster than EEPROM)
• high endurance (up to 10 trillion read/write cycles)
• low power consumption
• tamper resistance
• higher resistance to radiation than flash and EERPOM
• higher resistance to magnetic fields than MRAM

Benefits for users include:

• real time logging/monitoring possible
• simplification of system architecture by replacing RAM/ROM operations with FRAM
• reduced error sources in a simplified system
• extend/ensure battery lifetime
• increase/ensure data security and integrity

FRAM Applications

Applications for FRAM Standalone Products

• Smart Metering
• Factory Automation
• IoT / Wearables
• Automotive

Applications for FRAM RFID

• Industrial
• Medical
• Energy Harvesting