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History of Mie Plant

History of Mie Plant

Since 1984, when we started operation as a base for development, prototyping, and mass production of logics, bipolar transistors, and memory, Mie Fujitsu Semiconductor has contributed to the growth of Fujitsu Limited and the entire Japanese semiconductor industry for over 30 years. Here, we briefly outline our history.

History of Mie Plant
Fab-1 (150mm) started operation.(1984)

Fab-3 (200mm) started operation.(1991)
Fab-3 (200mm) started operation.(1991)

Fab-B2 started production of 65nm products(2007)
Fab-B2 started production of 65nm products(2007)

From the earliest days of LSI to the present

  Fujitsu Mie Plant
  • Establishment of a transistor manufacturing facility at Kawasaki Plant
  • Launch of the first silicon transistor
  • 'Completion of FACOM222, Japan's largest mainframe computer
  • Focus on the development of IC for computers such as TTL based on silicon semiconductor technology
  • Completion of Japan's first clean room for manufacturing semiconductor at Kawasaki Plant
    Commenced prototype IC making
  • In October, Aizu fab was established in Fukushima Pref
  • In November, the production of audio device and diode started
  • Completion of FACOM230-60, the world's first IC-based computer
  • Development of Ni-Cr thin-film Hybrid IC
  • Aizu fab started production of IC
  • Establishment of fine processing technology of Memories for computers (64Kb/256Kb-DRAM)
  • Sales of CMOS gate array was commenced
  • In May, Iwate fab was established and started production of 64Kb-DRAM in 1981
  • Successfully launched HEMT (High Electron Mobility Transistor)
  • The world's first 64Kb-DRAM was loaded on FM-8, personal computer
  • Announcement of the world's first CMOS 256Kb-EPROM
  • In October, Wakamatsu fab was established and started production of G/A, S/C, linear and others
Establishement of Mie Plant
  • In October, Mie plant was established and started operation of Fab-1 (150mm) for prototypes and mass production of large scale memory and large gate-array
  • First shipment of EPROM Products
  • In May, Fujitsu AMD Semiconductor Limited (FASL) was established
  • In October, Gresham fab was established in U.S. and started production of 256Kb-DRAM and 1Mb-DRAM in 1989
  • In September, Fab-2 (150mm) started operation
  • In November, Durham fab was established in U.K. and its first 4Mb-DRAM was shipped in 1992
  • In July, Fab-3 (200mm) started operation.
  • Establishment of the world's first mass production fab for GaAs IC in Japan
  • Development of the world's first CMOS based vector processing LSI (Super computer's operation function is in one chip)
  • Development of SPARC64, high performance processor
  • Mie Plant was certified to ISO9001(1994 Version)
  • Development of lithography technology which uses ArF excimer laser
    Realization of the world's first pattern formation based on 0.13um rule
  • Mie Plant was certified to ISO14001(1996 Version)
  • Fab-2 changed to 200mm from 150mm
  • Development of VLIW processor, "FR-V family" as the core of system LSI products
  • Opening of AkirunoTechnology Center
  • Establishment of an integrated system of development, design and prototype of leading-edge devices
  • Establishment of Fujitsu Integrated Microtechnology Limited (FIM), back-end assembly and test house
  • FPGA's foundry agreement with Lattice Semiconductor (U.S.)
  • Fujitsu group acquired the integrated ISO 14001 (1996) certification
  • Completion of new 300mm wafer manufacturing fab (Fab-B1) at Mie Plant
  • Earned the 51th Okochi Memorial Award for "Development and Implementation of Multi-giga-bit CMOS High-speed I/O"
  • Development of world's first baseband LSI for WiMAX with multiple uses for base stations and mobile devices
  • Fab-B1 started production of 90nm products in April
  • In September, initial introduction of NAS battery
  • Fujitsu Group (World Wide) acquired the integrated ISO 14001 (2004) certification
  • Establishment of 2nd 300mm manufacturing fab (Fab-B2)
  • In September, concluded a license agreement with MoSys Inc. to use "IT-SRAM®", an embedded memory technology, based on 65nm process
  • Fab-B2 started production of 65nm products
  • On March 21st, Fujitsu Microelectronics Limited (currently Fujitsu Semiconductor Limited), a spinoff of Fujitsu's LSI business unit, was established
Fujitsu Microelectronics
  • In August, ISO/TS16949 was certified
  • Announcement of outsourcing 40nm logic IC to TSMC and collaboration on leading-edge technologies of 28nm and beyond with TSMC
  • The headquarter of MIFS relocated to Shin-Yokohama Central Building (JR Station Building)
  • On April 1st, changed its company name to Fujitsu Semiconductor Limited
Fujitsu Semiconductor
  • Production start of LSI for Supercomputer "K"
  • Comprehensive license agreement with ARM
  • Consolidation of two design subsidiaries
  • Fujitsu Semiconductor Limited received a license of "PowerShrink™", low-power consumption CMOS technology from SuVolta (U.S.) and commenced joint development for commercialization
  • Transferred Iwate Fab to Denso Corporatio
  • Transferred back-end facilities of Fujitsu Integrated Microtechnology (FIM) to J-Devices Corporation
  • Transferred MCU and Analog business to Spansion (currently Cypress)
  • In April, LNG satellite base was installed in the factory
  • In September, mass production of DDC transistors based products started
  • In December, developed manufacturing technology to embed Flash memory cell in logic circuit with DDC technology
  • Integration of Fujitsu's GaN power device business with Transphorm, Inc. (U.S.)
  • In August, announced spinoff of Mie fab and Aizu fab as independent foundry companies and 40nm technology license agreement with UMC (Taiwan).
  • In December, Mie Fujitsu Semiconductor Limited was established with capital participation by UMC (Taiwan)

Mie Fujitsu Semiconductor
  • In April, MIFS acquired IPR (intellectual property right) of ultra low power technology from SuVolta
  • In November, a new clean room adopted SWIT(Swirling Induction Type HVAC system)
  • In April, MIFS announced partnership with Kilopass in the field of technology development
  • In April, MIFS made an announcement of combining Deeply Depleted Channel (DDC) and near/sub-threshold technologies to reduce energy
  • In August, MIFS and FSL announced an agreement with US-based Nantero, Inc. to license that company's technology for NRAM, non-volatile RAM using carbon nanotubes, and to conduct joint development