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History of Mie Plant

History of Mie Plant

Since 1984, when we started operation as a base for development, prototyping, and mass production of logics, bipolar transistors, and memory, Mie Fujitsu Semiconductor has contributed to the growth of Fujitsu Limited and the entire Japanese semiconductor industry for over 30 years. Here, we briefly outline our history.

History of Mie Plant
Fab-1 (150mm) started operation.(1984)

Fab-3 (200mm) started operation.(1991)
Fab-3 (200mm) started operation.(1991)

Fab-B2 started production of 65nm products(2007)
Fab-B2 started production of 65nm products(2007)

From the earliest days of LSI to the present

  Fujitsu Mie Plant
'1950s
56
  • Establishment of a transistor manufacturing facility at Kawasaki Plant
  • Launch of the first silicon transistor
 
57
  • 'Completion of FACOM222, Japan's largest mainframe computer
 
'1960s
63
  • Focus on the development of IC for computers such as TTL based on silicon semiconductor technology
 
66
  • Completion of Japan's first clean room for manufacturing semiconductor at Kawasaki Plant
    Commenced prototype IC making
 
67
  • In October, Aizu fab was established in Fukushima Pref
  • In November, the production of audio device and diode started
 
68
  • Completion of FACOM230-60, the world's first IC-based computer
 
'1970s
70
  • Development of Ni-Cr thin-film Hybrid IC
  • Aizu fab started production of IC
 
76
  • Establishment of fine processing technology of Memories for computers (64Kb/256Kb-DRAM)
 
79
  • Sales of CMOS gate array was commenced
 
'1980s
80
  • In May, Iwate fab was established and started production of 64Kb-DRAM in 1981
 
  • Successfully launched HEMT (High Electron Mobility Transistor)
 
81
  • The world's first 64Kb-DRAM was loaded on FM-8, personal computer
 
83
  • Announcement of the world's first CMOS 256Kb-EPROM
 
84
  • In October, Wakamatsu fab was established and started production of G/A, S/C, linear and others
Establishement of Mie Plant
  • In October, Mie plant was established and started operation of Fab-1 (150mm) for prototypes and mass production of large scale memory and large gate-array
85  
  • First shipment of EPROM Products
88
  • In May, Fujitsu AMD Semiconductor Limited (FASL) was established
  • In October, Gresham fab was established in U.S. and started production of 256Kb-DRAM and 1Mb-DRAM in 1989
  • In September, Fab-2 (150mm) started operation
'1990s
91
  • In November, Durham fab was established in U.K. and its first 4Mb-DRAM was shipped in 1992
  • In July, Fab-3 (200mm) started operation.
92
  • Establishment of the world's first mass production fab for GaAs IC in Japan
  • Development of the world's first CMOS based vector processing LSI (Super computer's operation function is in one chip)
 
95
  • Development of SPARC64, high performance processor
  • Mie Plant was certified to ISO9001(1994 Version)
96
  • Development of lithography technology which uses ArF excimer laser
    Realization of the world's first pattern formation based on 0.13um rule
  • Mie Plant was certified to ISO14001(1996 Version)
98  
  • Fab-2 changed to 200mm from 150mm
99
  • Development of VLIW processor, "FR-V family" as the core of system LSI products
 
'2000s
00
  • Opening of AkirunoTechnology Center
  • Establishment of an integrated system of development, design and prototype of leading-edge devices
 
03
  • Establishment of Fujitsu Integrated Microtechnology Limited (FIM), back-end assembly and test house
 
04
  • FPGA's foundry agreement with Lattice Semiconductor (U.S.)
  • Fujitsu group acquired the integrated ISO 14001 (1996) certification
  • Completion of new 300mm wafer manufacturing fab (Fab-B1) at Mie Plant
05
  • Earned the 51th Okochi Memorial Award for "Development and Implementation of Multi-giga-bit CMOS High-speed I/O"
  • Development of world's first baseband LSI for WiMAX with multiple uses for base stations and mobile devices
  • Fab-B1 started production of 90nm products in April
 
  • In September, initial introduction of NAS battery
06
  • Fujitsu Group (World Wide) acquired the integrated ISO 14001 (2004) certification
  • Establishment of 2nd 300mm manufacturing fab (Fab-B2)
 
  • In September, concluded a license agreement with MoSys Inc. to use "IT-SRAM®", an embedded memory technology, based on 65nm process
07  
  • Fab-B2 started production of 65nm products
08
  • On March 21st, Fujitsu Microelectronics Limited (currently Fujitsu Semiconductor Limited), a spinoff of Fujitsu's LSI business unit, was established
Fujitsu Microelectronics
 
  • In August, ISO/TS16949 was certified
09
  • Announcement of outsourcing 40nm logic IC to TSMC and collaboration on leading-edge technologies of 28nm and beyond with TSMC
 
 
  • The headquarter of MIFS relocated to Shin-Yokohama Central Building (JR Station Building)
'2010s
10
  • On April 1st, changed its company name to Fujitsu Semiconductor Limited
Fujitsu Semiconductor
  • Production start of LSI for Supercomputer "K"
11
  • Comprehensive license agreement with ARM
  • Consolidation of two design subsidiaries
 
  • Fujitsu Semiconductor Limited received a license of "PowerShrink™", low-power consumption CMOS technology from SuVolta (U.S.) and commenced joint development for commercialization
 
12
  • Transferred Iwate Fab to Denso Corporatio
  • Transferred back-end facilities of Fujitsu Integrated Microtechnology (FIM) to J-Devices Corporation
 
13
  • Transferred MCU and Analog business to Spansion (currently Cypress)
 
 
  • In April, LNG satellite base was installed in the factory
 
  • In September, mass production of DDC transistors based products started
 
  • In December, developed manufacturing technology to embed Flash memory cell in logic circuit with DDC technology
14
  • Integration of Fujitsu's GaN power device business with Transphorm, Inc. (U.S.)
 
  • In August, announced spinoff of Mie fab and Aizu fab as independent foundry companies and 40nm technology license agreement with UMC (Taiwan).
  • In December, Mie Fujitsu Semiconductor Limited was established with capital participation by UMC (Taiwan)

Mie Fujitsu Semiconductor
15  
  • In April, MIFS acquired IPR (intellectual property right) of ultra low power technology from SuVolta
 
  • In November, a new clean room adopted SWIT(Swirling Induction Type HVAC system)
16  
  • In April, MIFS announced partnership with Kilopass in the field of technology development
 
  • In April, MIFS made an announcement of combining Deeply Depleted Channel (DDC) and near/sub-threshold technologies to reduce energy
 
  • In August, MIFS and FSL announced an agreement with US-based Nantero, Inc. to license that company's technology for NRAM, non-volatile RAM using carbon nanotubes, and to conduct joint development
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