PRESS RELEASE

July 6, 2021
Fujitsu Semiconductor Memory Solution Limited

Fujitsu starts mass-production of 4Mbit FRAM with 125°C operation conforming to automotive grade

Non-volatile memory optimal for applications in automobiles and industrial machinery that require high reliability in high-temperature environments

Yokohama, Japan, July 6, 2021 – Fujitsu Semiconductor Memory Solution Limited today announced mass-production of 4Mbit FRAM* MB85RS4MTY, which guarantees operation up to 125°C, has started. (Fig.1)

Complying with AEC-Q100 Grade 1, a qualification requirement for products as "automotive grade", this FRAM product is optimal for industrial robots and automotive applications such as advanced driver-assistance systems (ADAS) which require electronic components with high reliability. (Fig.2)

日本語

FRAM is a non-volatile memory product with superior features of high read/write endurance, fast writing speed operation and low power consumption, and it has been mass-produced for over 20 years.

Since mass-production of FRAM products capable to operate up to 125°C started in July 2017, its product lineup has been expanding. (Fig.3) This time the 4Mbit FRAM MB85RS4MTY, which has the largest density in the 125°C-operating FRAM product family, is added to mass-production this month.

This FRAM with an SPI interface operates at a wide power supply voltage from 1.8V to 3.6V. In the temperature range from -40°C to +125°C, it guarantees 10 trillion read/write cycle times and low operating currents such as a maximum write current of 4mA (operated at 50MHz). It is housed in an 8-pin DFN (Dual Flatpack No-leaded) package.

The MB85RS4MTY meets the high reliability testing to satisfy AEC-Q100 Grade 1, a qualification requirement for products as "automotive grade", therefore, suitable for high performance industrial robots and automotive applications such as advanced driver-assistance systems (ADAS).

Fig.1: MB85RS4MTY 8-pin DFN (Top・Bottom)

Fig.2: Examples of FRAM usage

Fig.3: 125℃-operating FRAM product lineup

Our FRAM products can solve following issues arising from using EEPROM or SRAM for high reliability applications. (Fig.4)

Customers’ issues and solutions

  1. Status: Using EEPROM
    Issue: Having difficulties for more frequent data logging due to the limit of write endurance spec
    Solution: Use of FRAM guaranteed 10 trillion read/write cycles
  2. Status: Using EEPROM
    Issue: Having risks to lose data in writing at sudden accident or power outage
    Solution: Use of FRAM featuring fast writing to protect data in writing at power outage
  3. Status: Using SRAM
    Issue: Difficult to remove a battery for data retention
    Solution: Use of FRAM as a non-volatile memory

In summary, our FRAM products bring to customers benefits like reduced development burden, enhanced customer’s product performance, and lower costs. (Fig.4)

Fig.4: Customers' issues and solutions

Fujitsu Semiconductor Memory Solution Limited continues to develop memory products to satisfy the needs and requirements from the market and customers.

Key Specifications

Part NumberMB85RS4MTY
Density (configuration)4Mbit (512K x 8bit)
InterfaceSPI (Serial Peripheral Interface)
Operating frequency50MHz maximum
Operating voltage1.8V to 3.6V
Operating temperature range-40℃ to +125℃
Read/Write endurance10 trillion times (1013 times)
Package8-pin DFN
Qualification standardAEC-Q100 Grade 1 compliant

Glossary and Notes

  • * FRAM:
    Ferroelectric Random Access Memory
    Ferroelectric random-access memory. A type of memory that uses a ferroelectric file as capacitors that store data. Retains contents even when power is removed. Combines benefits of both ROM and RAM, with fast write speed, low-power consumption, and high read/write cycle endurance. Also known as FeRAM. Produced by Fujitsu Semiconductor Memory Solution since 1999.

About Fujitsu Semiconductor Memory Solution Limited
Fujitsu Semiconductor Memory Solution focuses on high-quality and highly reliable non-volatile memory like Ferroelectric Random Access Memory (FRAM) and Resistive Random Access Memory (ReRAM). Headquartered in Yokohama, we were established as a subsidiary of Fujitsu Semiconductor Limited on March 31, 2020. Through our global sales and development network, with sites in Japan and throughout Asia, Europe, and the Americas, we offer semiconductor memory solutions to the global marketplace. For more information, please see: https://www.fujitsu.com/jp/fsm/en/

Contacts

Fujitsu Semiconductor Memory Solution Limited
Marketing Division


Company and product names mentioned herein are trademarks or registered trademarks of their respective companies. Information provided in this press release is accurate at time of publication and subject to change without advance notice.

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