PRESS RELEASE

July 6, 2021
Fujitsu Semiconductor Memory Solution Limited

Fujitsu starts mass-production of 4Mbit FeRAM with 125°C operation conforming to automotive grade

Non-volatile memory optimal for applications in automobiles and industrial machinery that require high reliability in high-temperature environments

日本語

FeRAM is a non-volatile memory product with superior features of high read/write endurance, fast writing speed operation and low power consumption, and it has been mass-produced for over 20 years.

Since mass-production of FeRAM products capable to operate up to 125°C started in July 2017, its product lineup has been expanding. (Fig.3) This time the 4Mbit FeRAM MB85RS4MTY, which has the largest density in the 125°C-operating FeRAM product family, is added to mass-production this month.

This FeRAM with an SPI interface operates at a wide power supply voltage from 1.8V to 3.6V. In the temperature range from -40°C to +125°C, it guarantees 10 trillion read/write cycle times and low operating currents such as a maximum write current of 4mA (operated at 50MHz). It is housed in an 8-pin DFN (Dual Flatpack No-leaded) package.

The MB85RS4MTY meets the high reliability testing to satisfy AEC-Q100 Grade 1, a qualification requirement for products as "automotive grade", therefore, suitable for high performance industrial robots and automotive applications such as advanced driver-assistance systems (ADAS).

Our FeRAM products can solve following issues arising from using EEPROM or SRAM for high reliability applications. (Fig.4)

Customers’ issues and solutions

1. Status: Using EEPROM
   Issue: Having difficulties for more frequent data logging due to the limit of write endurance spec
   Solution: Use of FeRAM guaranteed 10 trillion read/write cycles
2. Status: Using EEPROM
   Issue: Having risks to lose data in writing at sudden accident or power outage
   Solution: Use of FeRAM featuring fast writing to protect data in writing at power outage
3. Status: Using SRAM
   Issue: Difficult to remove a battery for data retention
   Solution: Use of FeRAM as a non-volatile memory

In summary, our FeRAM products bring to customers benefits like reduced development burden, enhanced customer’s product performance, and lower costs. (Fig.4)

Fig.4: Customers' issues and solutions

Fujitsu Semiconductor Memory Solution Limited continues to develop memory products to satisfy the needs and requirements from the market and customers.

Key Specifications

Glossary and Notes

• * FeRAM:
  Ferroelectric Random Access Memory
  Ferroelectric random-access memory. A type of memory that uses a ferroelectric file as capacitors that store data. Retains contents even when power is removed. Combines benefits of both ROM and RAM, with fast write speed, low-power consumption, and high read/write cycle endurance. Produced by Fujitsu Semiconductor Memory Solution since 1999.

For more information:

• Fujitsu Semiconductor Memory Solution top page
• FeRAM Top page
• MB85RS4MTY Introduction page
• MB85RS4MTY(AEC-Q100 compliant, including 8-pin DFN package) datasheet
• (Reference) MB85RS4MTY(for general use, including 8-pin SOP and 8-pin DFN package) datasheet

About Fujitsu Semiconductor Memory Solution Limited
Fujitsu Semiconductor Memory Solution focuses on high-quality and highly reliable non-volatile memory like Ferroelectric Random Access Memory (FeRAM) and Resistive Random Access Memory (ReRAM). Headquartered in Yokohama, we were established as a subsidiary of Fujitsu Semiconductor Limited on March 31, 2020. Through our global sales and development network, with sites in Japan and throughout Asia, Europe, and the Americas, we offer semiconductor memory solutions to the global marketplace. For more information, please see: https://www.fujitsu.com/jp/fsm/en/

Contacts

Company and product names mentioned herein are trademarks or registered trademarks of their respective companies. Information provided in this press release is accurate at time of publication and subject to change without advance notice.