PRESS RELEASE

April 14, 2020
Fujitsu Semiconductor Memory Solution Limited

Fujitsu has Launched a 2Mbit FeRAM with a 1.8V Power Supply and a Guaranteed Operation up to 125℃

Non-volatile memory optimal for advanced driver-assistance systems (ADAS) for advanced automotive market

日本語

FeRAM is a non-volatile memory product with features of higher read/write endurance, faster writing speed operation and lower power consumption compared to EEPROM and flash memory. FeRAM has been adopted by customers who are not satisfied with the specifications of conventional non-volatile memories.

Since 2017, Fujitsu has been providing 64Kbit to 2Mbit automotive grade FeRAM products that operate up to 125℃ on 3.3V or 5V power supply. However, some customers have been requesting for FeRAM that can operate at lower voltage than 1.8V like 1.7V, especially for electronic control unites of advanced automobiles that need electronics components with lower power consumption. We are pleased to be able to fulfill this requirement with our new 2Mbit FeRAM product.

The MB85RS2MLY guarantees 10 trillion read/write cycle times in the temperature range from -40°C to +125°C. This characteristic is optimal for some applications that require real-time data logging.

For instance, if data is recorded at every 0.1 seconds every day for 10 years, number of write times is more than 3 billion. In addition, the reliability testing for this product is compliant to AEC-Q100 Grade 1, a qualification requirement for a product to be called "automotive grade." Therefore, our new FeRAM is guaranteed to be adopted for applications such as ADAS requiring real-time data logging, from viewpoints of both data write endurance and reliability.

This FeRAM product is housed in an industry-standard 8-pin SOP package, making it easy to replace existing EEPROM that has a similar footprint. In addition, 8-pin DFN (Dual Flatpack No-leaded) package with the dimensions of 5.0 x 6.0 x 0.9mm is also available.

In addition to 2Mbit FeRAM, development of 4Mbit-density products in 125°C-operating family is ongoing.

Fujitsu Semiconductor Memory Solution Limited will continue to supply memory products and solutions to satisfy future needs and requirements from market and customers.

Key Specifications

Glossary and Notes

• * FeRAM:
  Ferroelectric Random Access Memory
  Ferroelectric random-access memory. A type of memory that uses a ferroelectric file as capacitors that store data. Retains contents even when power is removed. Combines benefits of both ROM and RAM, with fast write speed, low-power consumption, and high read/write cycle endurance. Produced by Fujitsu Semiconductor Memory Solution since 1999.

For more information:

• Fujitsu Semiconductor Memory Solution top page
• FeRAM Top page
• MB85RS2MLY Introduction page
• MB85RS2MLY datasheet (for automotive applications)

About Fujitsu Semiconductor Memory Solution Limited
Fujitsu Semiconductor Memory Solution focuses on high-quality and highly reliable non-volatile memory like Ferroelectric Random Access Memory (FeRAM) and Resistive Random Access Memory (ReRAM). Headquartered in Yokohama, we were established as a subsidiary of Fujitsu Semiconductor Limited on March 31, 2020. Through our global sales and development network, with sites in Japan and throughout Asia, Europe, and the Americas, we offer semiconductor memory solutions to the global marketplace. For more information, please see: https://www.fujitsu.com/jp/group/fsm/en/

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