08 April, 2014
Fujitsu Semiconductor Limited
Yokohama, Japan, April 8, 2014 — Employees of Fujitsu Semiconductor Limited have received "Prize for Science and Technology (Development Category)" of "Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology", on their work for the "Development of the Volume Production Technology for High Density Ferroelectric Random Access Memory". The reception ceremony will be held on Tuesday, April 15 at the Ministry of Education, Culture, Sports, Science and Technology (MEXT) in Tokyo.
MEXT commends individuals for their important achievements in R&D related to science and technology and their promotion of science and technology understanding. The award is aimed at motivating researchers and helping to raise the level in Japan's science and technology. The Prizes for Science and Technology (Development Category) are presented to individuals who conducted epoch-making researches or inventions, which are actually in use and contributing to the improvement of Japan's society, economy, and well-being of the people.
Wensheng Wang, Process Technology Division
Shoichiro Kawashima, System Memory Business Division
Kazuaki Takai, System Memory Business Division
Toru Takeshima, System Memory Business Division
Takashi Eshita, Process Technology Division
"Development of the Volume Production Technology for High Density Ferroelectric Random Access Memory"
Smart cards and mobile devices, which have gained popularity since the 1990's, have been requiring memories that store the data even when the power is switched off (non-volatility), operates at low power in high speed, and have high read/write cycle endurance. Ferroelectric Random Access Memory, or FRAM, meets these requirements, but the efforts for the technology developments, both in Japan and United States, to manufacture the memory using the conventional semiconductor process had not been necessarily successful. Oxide ferroelectric material used in the FRAMs is reduced by hydrogen gas generated during the conventional semiconductor process, and the reaction causes the degradation of the ferroelectricity. Fujitsu Semiconductor developed the technology that could prevent the ferroelectricity degradation, and made the volume production of FRAMs possible. It also developed the process technology that enhances polarization in the ferroelectric capacitors, as well as the read-write circuits optimized for the characteristics of the ferroelectric capacitors, enabling the high memory density and low voltage operation. Today, leveraging the superior characteristics in read/write cycle endurance, write speed, and power consumption, FRAMs are utilized in many applications such as smart cards, authentication devices, electronic tags and others.
Fujitsu Semiconductor Limited designs and manufactures semiconductors, providing highly reliable, optimal solutions and support to meet the varying needs of its customers. Products and services include Customized SoCs (ASICs), Foundry Service, ASSPs, and Ferroelectric RAMs (FRAMs), with wide-ranging expertise focusing on mobile, imaging, automotive and high performance applications. Fujitsu Semiconductor also drives power efficiency and environmental initiatives. Headquartered in Yokohama, it was established as a subsidiary of Fujitsu Limited on March 21, 2008. Through its global sales and development network, with sites in Japan and throughout Asia, Europe, and the Americas, Fujitsu Semiconductor offers semiconductor solutions to the global marketplace.
For more information, please see: : http://www.fujitsu.com/jp/fsl/en/
Company and product names mentioned herein are trademarks or registered trademarks of their respective companies. Information provided in this press release is accurate at time of publication and subject to change without advance notice.
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