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History of Fujitsu's Semiconductor Business

| History | History of Fujitsu's Semiconductor Business |


1956

Transistor factory is established in the Kawasaki plant.
Commercialization of the first silicon transistor for relay machine of Nippon Telegraph and Telephone Public Corporation (NTT).

1957

Completion of the biggest, large-scale general purpose computer in Japan, the FACOM222.

1963

Development of Transistor-Transistor-Logic(TTL) interface IC based on silicon semiconductor technology targeted for computers.

1966

The first semiconductor production clean room is completed in Japan, fully equipped with then modern facilities in Kawasaki plant.

1968

Completion of world's first full IC computer FACOM230-60.

1970

Ni-Cr thin film hybrid ICs developed.
IC production at the Aizu plant in Fukushima, Japan begins and system for mass production established.

1976

Advanced silicon process technologies established for 64Kb/256Kb DRAM memory chips to be used in computers.

1979

Started sales of CMOS gate array ICs to customers outside of Fujitsu.
Fujitsu Microelectronics Inc.(now Fujitsu Semiconductor America Inc.) established in U.S.A as a design and sales subsidiary.

1980

Succeeded in commercializing HEMT semiconductor devices for which Fujitsu designed and developed its principle of operation.
Fujitsu Microelectronics GmbH (now Fujitsu Semiconductor Europe GmbH) established in Europe as design and sales subsidiary.

1981

World's first 64Kb DRAM memory installed in FM-8 personal computer.

1983

Announced world's first CMOS 256Kb EPROM memory chip.

1986

Fujitsu Microelectronics Asia pte Limited (now Fujitsu Semiconductor Asia Pte. Ltd.) established in Singapore as design and sales subsidiary.

1992

World's first mass production plant of Gallium Arsenide ICs established.
First in the world to develop a vector processing CMOS IC that has the computational power of a supercomputer on a single chip.

1996

Development of ArF lithographic technology, and first in the world to achieve the equivalent of 4Gb DRAM in 0.13um.

1999

The "FR-V" VLIW processor family is developed as a core of system LSIs.
Fujitsu Microelectronics Korea Limited (now Fujitsu Semiconductor Korea Limited) established as sales subsidiary in Korea.

2000

Establishment of the Akiruno Technology Center, Tokyo. To provide an integrated environment for development, design and prototyping of advanced technology devices.

2003

Fujitsu Integrated Microtechnology Ltd. established as a semiconductor's assembly and testing subsidiary.
Fujitsu Microelectronics (Shanghai) Co. Limited (now Fujitsu Semiconductor (Shanghai) Co., Ltd.) established as a Chinese a sales and design subsidiary.

2004

New production facility for 300mm wafers at the Mie plant constructed (started manufacturing at 90nm from April, 2005).
Manufacturing partnership with Lattice Semiconductor Corporation for FPGA products.

2005

Development and practical use of the multi-giga-bit CMOS high speed input and output technology wins the 51st Ohkouchi Commemorative award.
Developed world's first baseband IC for WiMAX usable both in a base stations and client equipment.

2006

A second 300mm wafer line is constructed at the Mie plant (manufacturing 65nm from April, 2007).
Establishment of the e-Shuttle Inc., a joint venture with Advantest Corporation, to commercialize electron beam direct writing of ICs.
Purchase of Chinese IC design company, West Star Chips Co., Ltd. (now Fujitsu Semiconductor Design (Chengdu) Co. Ltd.), to strengthen Asian business.

2007

Fujitsu Electronics Inc., a Japan sales subsidiary was established by combining the sales department of the Fujitsu electronic device business and Fujitsu Device Inc.

2008

Fujitsu Microelectronics Limited (now Fujitsu Semiconductor Limited) established as the semiconductor business subsidiary of Fujitsu Limited.

As for the history after 2008, refer to the page for "History".

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