Featuring memory with the industry's smallest read current, optimal for small wearable devices
Fujitsu Semiconductor Limited announced the release of the 8Mbit ReRAM(*1) MB85AS8MT, which has the world's largest density as a mass-produced ReRAM product, available from September 2019. This ReRAM product was jointly developed with Panasonic Semiconductor Solutions Co., Ltd.(*2).
The MB85AS8MT is an EEPROM-compatible non-volatile memory with SPI-interface that operates with a wide range of power supply voltages from 1.6V to 3.6V. One major feature of this memory is an extremely small average current for read operations of 0.15mA at an operating frequency of 5MHz. This enables minimal battery consumption when mounted in battery-operated applications with frequent data-read operations.
Since it can be provided in a very small WL-CSP (Wafer Level Chip Size Package), it is optimal for battery-operated small wearable devices such as hearing aids, smart watches, and smart band. (Fig.1)
Fujitsu Semiconductor offers various Ferroelectric RAM (FRAM) (*3) products featuring higher write endurance and faster write speeds compared to EEPROM and flash memory. Our FRAM products are becoming known as the optimal non-volatile memory for very frequent data logging and for writing data protection against sudden power outages. Meanwhile, some customers have been requesting memory that uses less current for read operations because their applications perform operations with small data write counts and very frequent data reading.
In order to meet such needs, this new non-volatile ReRAM memory has been developed with the two features of "large density enabling byte-access" and "small read current." This time, our company has newly developed the MB85AS8MT, featuring world-class largest density in the ReRAM family at 8Mbit.
The MB85AS8MT is a non-volatile memory and has the world's largest density at 8Mbit in the mass-produced ReRAM product family. Featuring an SPI interface, it operates at a wide range of power supply voltages from 1.6V to 3.6V. Its electric specifications, such as commands and timings, are compatible with EEPROM products.
Its major feature is an extremely small average read current, despite its large density. At an operating frequency of 5MHz, the average read current is 0.15mA, which is only 5% of large density EEPROM devices.
Therefore, mounted in battery-operated applications with frequent data-read operations, such as specific program reading or setting data reading, it enables minimal battery consumption due to its very small read current. (Fig.2)
The package is an EEPROM-compatible 8-pin small outline package (SOP). In addition, a very small 11-pin WL-CSP package of 2mm x 3mm is available for mounting in small wearable devices. (Fig.3)
The MB85AS8MT with large density memory and low power consumption in a very small package is the optimal memory for battery-operated small wearable devices such as hearing aids, smart watches, and smart bands.
Fujitsu Semiconductor will continue to devote its efforts to devising the best memory for specific applications by specific customers.
Resistive random access memory. A form of non-volatile memory in which pulse voltage is applied to a thin metal oxide film, creating massive changes in resistance to record ones and zeros. With a simple structure of metal oxide placed between electrodes, its manufacturing process is very simple, while still offering excellent features such as low power consumption and fast write speeds.
(*2) Panasonic Semiconductor Solutions Co., Ltd.:
1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan
Ferroelectric random-access memory. A type of memory that uses a ferroelectric file as capacitors to store data. Retains contents even when power is cut. Combines benefits of both ROM and RAM, with fast write speed, low power consumption, and high read/write cycle endurance. Also known as FeRAM. Produced by Fujitsu Semiconductor since 1999.
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