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ReRAM (Resistive Random Access Memory)

Resistive Random Access Memory ReRAM. With the industry's lowest read current. Optimal for wearable devices and hearing aids.

ReRAM Overview

ReRAM: Resistive random access memory.
A form of non-volatile memory in which a pulse voltage is applied to a metal oxide thin film, creating massive changes in resistance to record ones and zeros.
With a simple structure of metal oxide placed between electrodes, the manufacturing process is very simple, while still offering such excellent features as low power consumption and fast write.
Featuring memory with the industry's lowest read current, optimal for wearable devices and hearing aids.

ReRAM Applications

Smart Watch, Smart Glass, Hearing aids

Remarkable Products

ReRAM Product

Part Number
(icon-pdfDatasheet)
Memory
Density
Power
Supply
Voltage
Operating
Freq.
Operating
Temp.
Read
current
Read
cycle
Package
MB85AS8MT
ENG (1.54 MB )
8Mbit 1.6 to 3.6V 10MHz -40 to +85℃ 0.15mA Unlimited SOP-8,
WLCSP-11
MB85AS4MT
ENG (939 KB)
4Mbit 1.65 to 3.6V 5MHz -40 to +85℃ 0.2mA Unlimited SOP-8

* Interface is SPI.

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Global Contacts

[ Related Links ] ReRAM | ReRAM Introduction | ReRAM FAQ |

ReRAM Sample/Document Request & Inquiry Form

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For requests of evaluation samples, and/or
documents such as datasheets

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For general questions, such as technical
inquiry, sample availability, pricing

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