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FRAM Features


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FRAM Overview

FRAM (Ferroelectric RAM) is a non-volatile and random access memory (RAM) which retains stored data even when power is turned off. As compared with conventional types of non-volatile memory, such as EEPROM and Flash memory, FRAM exhibits superior performance through faster write speeds, greater read/write cycle endurance and lower power consumption.

Since we started mass production of FRAM in 1999, Fujitsu Semiconductor has been assuring a high quality and stable supply of FRAM products to our valued customers for more than 15 years.

FRAM products of 4Kbit to 4Mbit are now available in production. Fujitsu is offering FRAM samples for customer evaluation. Please confirm our FRAM Product Lineup and request us samples and/or documents by the "FRAM Sample/Document Requests & Inquiry Form" if you would like to have.

5 Great Features

  • Non-volatility
    • Even when not powered, the stored information can be retained
    • Battery-free (Eco product)
  • Fast Write Speed
    • Over-writable just like SRAM
    • Rewrite command is not required
    • No waiting time for erase/write operation
    • Writing time: 1/2,500 of EEPROM
  • High Read/Write Cycle Endurance
    • Guarantee the endurance of Max. 1013 (=10 trillion) read/write cycles
    • Endurance: more than 10 million times of EEPROM
  • Lower power consumption
    • No booster circuit for write operation
    • Power consumption at write: less than 1/13 of EEPROM (2Mbit products, 2Kbit write for a second)
    • No data retention current to keep the data
  • High Security
    • A high difficulty of illegal analysis because of FRAM cell structure

Product Lineup

Comparison between FRAM and other Memories

Comparison of Features

Memory Type Non-volatile Non-volatile Non-volatile Volatile
Write Method Overwrite Erase + Write Erase + Write Overwrite
Write Cycle Time 150ns 5ms 10µs 55ns
Read/Write Cycles 1013 106 105 Unlimited
Booster Circuit No Yes Yes No
Data Backup Battery No No No Yes

Serial FRAM compared with EEPROM/Flash

Comparing with conventional non-volatile memory such as EEPROM and Flash, FRAM has advantages in faster writing, higher endurance and lower power consumption. Using FRAM instead of EEPROM and Flash has more advantages;

1. Performance Improvement
FRAM's high-speed writing can take backup data at an instantaneous power supply interruption. Not only that, FRAM can record data more frequent than EEPROM and Flash memories. When writing the data, EEPROM and Flash memories need high voltage and thus, consume more power than FRAM. The battery of battery-powered device lives longer if FRAM embedded.

In summary, FRAM is;

  • Able to take backup data at an instantaneous power supply interruption
  • Able to take frequent data records
  • Able to keep a battery life longer

2. Total Cost Reduction
In the case of parameter writing to each product at factory, FRAM can contribute to reduce manufacturing cost because FRAM can shorten the writing time compared with EEPROM and Flash memories. In addition, FRAM can give you one chip solution instead of multi-chip solution, e.g., 2 chips consisting of EEPROM+Flash, or 3 devices consisting of EEPROM+ SRAM+battery, to record frequent data log.

  • Shorten the writing time when parameter writing at factory
  • Reducing a number of parts on a product

Parallel FRAM compared with SRAM

FRAM with parallel interface, which has compatibility with battery backup SRAM, can become a substitution of the SRAM. By replacing SRAM with the FRAM, customers expect to get the following advantages.

1. Total Cost Reduction
System using SRAM needs to keep control of battery-status check. By replacing with FRAM, customers can be freed from the burden of maintenance of battery check. In addition, FRAM does not require battery socket and backflow prevention diode and the space for them, which SRAM requires. FRAM's one chip solution can reduce the space and cost.

  • Maintenance free; battery exchange is unnecessary
  • Device downsizing; a number of parts for device can be reduced

2. Eco-Friendly Product
Used battery becomes industrial waste. By replacing SRAM + battery solution with FRAM, unnecessary backup batteries can be reduced.

  • No battery disposal

* EEPROM: Electronically Erasable and Programmable Read-Only Memory

FRAM Sample/Document Request & Inquiry Form

Sample/Document Request
For requests of evaluation samples, and/or
documents such as datasheets, brochure

For general questions, such as technical
inquiry, sample availability, pricing