FUJITSU has been offering the high quality and high performance memory, which are essential for enhanced digital applications, over many years. In addition to offering memory products for the greater miniaturization, higher performance, and lower power consumption in recent years, our company also proposes the best solutions combined with memory.
FRAM (Ferroelectric Random Access Memory) is one type of non-volatile memory. As compared with conventional types of non-volatile memory, such as EEPROM (Electrically Erasable and Programmable Read-Only Memory) and Flash memory, FRAM exhibits superior performance through faster write speeds, greater read/write cycle endurance and lower power consumption. Fujitsu Semiconductor has been providing FRAM to the card, industrial, and medical fields, besides, in recent years its use has expanded to IoT applications, such as wearable devices, robots, and drones.
ReRAM (Resistive Random Access Memory) is a type of non-volatile memory.
Since the current in read is extremely low, it is ideal for compact devices such as battery-powered wearable devices and hearing aids.
NRAM is non-volatile memory utilizing a new technology called carbon nanotubes. It has expected as new non-volatile memory featuring greater read/write endurance, lower power consumption, and faster write speeds, with large memory density.
Overview of our highly reliable technology and services based on our mature process technology, production technology, foundry business support organization, continuous quality assurance activities, and improvement of QCD (Quality Cost Delivery) through production renovation activities.
We are providing our 150mm wafer foundry business and test service business from our manufacturing base in Aizuwakamatsu city, Fukushima Prefecture.
Mie Fujitsu Semiconductor Limited became a member of the United Microelectronics Corporation (UMC) group on October 1, 2019, changing its name to United Semiconductor Japan Co., Ltd. (USJC).
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