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Stand-alone Memory (I2C/SPI/Parallel interface products)

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Introduction

FRAM is a memory featuring advantages of both ROM and RAM. It is good in high-speed writing, high endurance and low power operation. Fujitsu Semiconductor provides FRAM products with serial (I2C and SPI) and parallel interface, and 4Kbit to 4Mbit products are now available in production.
Fujitsu is offering the engineering samples or production samples for customer evaluation. Please confirm our FRAM Product Lineup and request us samples and/or documents by the "FRAM Sample/Document Request & Inquiry Form" if you would like to have.

Advantages of FRAM

vs SRAM

Stand-alone FRAM memory,which has high degree of compatibility with SRAM because of its Pseudo-SRAM I/F, can be a substitution of SRAM. The advantages you can get from replacing SRAM with FRAM are as follows;

1. Total Cost Reduction

Using SRAM needs to check its battery status. But, FRAM will let you free from this annoying battery check. Also, FRAM does not require battery socket and backflow prevention diode and the space for them, which SRAM requires. FRAM's one chip solution can reduce the space and cost.

  • Maintenance free; battery exchange is unnecessary
  • Device downsizing; a number of parts for device can be cut

2. Eco--Friendly Product(reduction of environmental load)

Used battery becomes industrial waste. Yet, FRAM is able to reduce half amount of CO2 emission compared with SRAM at the manufacturing process. FRAM is good for environment as well.

  • No battery disposal
  • Reduction in manufacture loads for environment

vs E2PROM/Flash

Comparing with conventional non-volatile memory such as E2PROM and Flash, FRAM has advantages in faster writing, higher endurance and lower power consumption. Using FRAM instead of E2PROM and Flash has more advantages;

1. Performance Improvement

FRAM's high-speed writing can take backup data at an instantaneous power supply interruption. Not olny that, FRAM can record data more frequent than E2PROM and Flash memories. When writing the data, E2PROM and Flash memories need high voltage and thus, comsume more power than FRAM. The battery of battery-powered device lives longer if FRAM embedded.
In summary, FRAM is;

  • Able to take backup data at an instantaneous power supply interruption
  • Able to take frequent data records
  • Able to keep a battery life longer

2. Total Cost Reduction

In the case of writing factory parameter to each product, FRAM can shorten the writing time compared with E2PROM and Flash memories. Also, FRAM can give you one chip solution, and avoid using several memories to keep data, which E2PROM cannot. Therefore, the total cost is reduced by using FRAM!

  • Shorten the writing time when factory parameter writing
  • Reducing a number of parts on a product

Products List

Serial Memory

I2C Interface

Part Number Memory
Density
Power Supply
Voltage
Operating
Frequency
(MAX)
Operating
Temperature
Read/Write
Cycle
Package
MB85RC1MT
ENG(1.40 MB )
CHN(2.11 MB )
1Mbit 1.8 to 3.6V 3.4MHz -40 to +85℃ 10¹³ (10 trillion) times SOP-8
MB85RC512T
ENG(1.40 MB )
CHN(2.24 MB )
512Kbit 1.8 to 3.6V 3.4MHz -40 to +85℃ 10¹³ (10 trillion) times SOP-8
MB85RC256V
ENG(1.93 MB )
CHN(2.12 MB )
256Kbit 2.7 to 5.5V 1MHz -40 to +85℃ 10¹² (1 trillion) times SOP-8
MB85RC128A
ENG(1.25 MB )
CHN(2.05 MB )
128Kbit 2.7 to 3.6V 1MHz -40 to +85℃ 10¹² (1 trillion) times SOP-8
MB85RC64TA
ENG(1.67 MB )
64Kbit 1.8 to 3.6V 3.4MHz -40 to +85℃ 1013 (10 trillion) times SOP-8
SON-8
MB85RC64A
ENG(1.26 MB )
CHN(2.05 MB )
64Kbit 2.7 to 3.6V 1MHz -40 to +85℃ 10¹²(1 trillion) times SOP-8
MB85RC64V
ENG(1.30 MB )
CHN(2.10 MB )
64Kbit 3.0 to 5.5V 1MHz -40 to +85℃ 10¹² (1 trillion) times SOP-8
MB85RC16
ENG(1.30 MB )
CHN(2.10 MB )
16Kbit 2.7 to 3.6V 1MHz -40 to +85℃ 10¹² (1 trillion) times SOP-8
SON-8
MB85RC16V
ENG(1.26 MB )
CHN(2.00 MB )
16Kbit 3.0 to 5.5V 1MHz -40 to +85℃ 10¹² (1 trillion) times SOP-8
MB85RC04V
ENG(1.28 MB )
CHN(1.96 MB )
4Kbit 3.0 to 5.5V 1MHz -40 to +85℃ 10¹² (1trillion) times SOP-8

SPI Interface(for High Reliability Use, AEC-Q100 Compliant)

Part Number Memory
Density
Power Supply
Voltage
Operating
Frequency
(MAX)
Operating
Temperature
Read/Write
Cycle
Package
MB85RS256TY
(AEC-Q100)
ENG(1.60 MB )
256Kbit 1.8 to 3.6V 40MHz -40 to +125℃ 1013(10 trillion) times SOP-8
MB85RS128TY
(AEC-Q100)
ENG (1.61 MB )
128Kbit 1.8 to 3.6V 40MHz -40 to +125℃ 10¹³ (10 trillion) times SOP-8

SPI Interface(for General Use)

Part Number Memory
Density
Power Supply
Voltage
Operating
Frequency
(MAX)
Operating
Temperature
Read/Write
Cycle
Package
MB85RS4MT
ENG(1.50 MB )
4Mbit 1.8 to 3.6V 40MHz -40 to +85℃ 1013 (10 trillion) times SOP-8
MB85RQ4ML
ENG(1.99MB )
4Mbit 1.7 to 1.95V 108MH -40 to +85℃ 1013 (10 trillion) times SOP-16
MB85RS2MTA
ENG(1.63 MB )
2Mbit 1.8 to 3.6V 33MHz(*2) -40 to +85℃ 1013 (10 trillion) times SOP-8,
DIP-8
MB85RS2MT
ENG(1.42 MB )
CHN(1.28 MB )
2Mbit 1.8 to 3.6V 25MHz(*1) -40 to +85℃ 1013(10 trillion) times SOP-8,
DIP-8
MB85RS1MT
ENG(1.88 MB )
CHN(2.42 MB )
1Mbit 1.8 to 3.6V 30MHz(*1) -40 to +85℃ 1013 (10 trillion) times SOP-8,
WL-CSP
MB85RS512T
ENG (1.38 MB )
CHN (2.16 MB )
512Kbit 1.8 to 3.6V 30MHz(*1) -40 to +85℃ 1013 (10 trillion) times SOP-8
MB85RS256TY
(for General Use)
ENG (1.60 MB)
256Kbit 1.8 to 3.6V 33MHz -40 to +125℃ 1013 (10 trillion) times SOP-8
MB85RS256B
ENG (1.38 MB )
CHN (2.00 MB )
256Kbit 2.7 to 3.6V 33MHz -40 to +85℃ 1012 (1 trillion) times SOP-8
MB85RS128TY
(for General Use)
ENG (824 KB)
128Kbit 1.8 to 3.6V 33MHz -40 to +125℃ 1013 (10 trillion) times SOP-8
MB85RS128B
ENG (1.36 MB )
CHN (2.00 MB )
128Kbit 2.7 to 3.6V 33MHz -40 to +85℃ 1012 (1 trillion) times SOP-8
MB85RS64TU
ENG (1.59 MB )
64Kbitt 1.8 to 3.6V 10MHz -55 to +85℃ 1013 (10 trillion) times SOP-8
SON-8
MB85RS64T
ENG (1.58 MB )
64Kbit 1.8 to 3.6V 10MHz -40 to +85℃ 1013 (10 trillion) times SOP-8
ON-8
MB85RS64V
ENG (1.34 MB )
CHN (1.96 MB )
64Kbit 1.8 to 3.6V 33MHz -40 to +85℃ 1012 (1 trillion) times SOP-8
MB85RS64
ENG (1.25 MB )
CHN (1.96 MB )
64Kbit 2.7 to 3.6V 20MHz -40 to +85℃ 1012 (1 trillion) times SOP-8
MB85RS16
ENG (1.31MB )
CHN (2.04 MB )
16Kbit 2.7 to 3.6V 20MHz -40 to +85℃ 1012 (1 trillion) times SOP-8
MB85RS16N
ENG (1.42 MB )
CHN (2.17 MB )
16Kbit 2.7 to 3.6V 20MHz -40 to +95℃ 1012 (1 trillion) times at 85℃,
1010(10 billion) times at 95℃
SOP-8
SON-8
MB85RDP16LX (*2)
ENG (492 KB)
16Kbit 1.65 to 1.95V 15MHz -40 to +105℃ 1013 (10 trillion) times SOP-8
*1: Maximum 40MHz operation is available at fast read mode.
*2: With binary counter function.
*3:Maximum 7.5MHz operation is available at Dual SPI mode.


Parallel Memory

Part Number Memory Density Power Supply
Voltage
Write Cycle
Time (MAX)
Operating
Temperature
Read/Write
Cycle
Package
MB85R8M2T
ENG(1.11 MB )
8Mbit(512K×16) 1.8 to 3.6V 150ns -40 to +85℃ 1013 (10 trillion) times FBGA-48
MB85R4M2T
ENG(668 KB )
CHN(805KB)
4Mbit(256K×16) 1.8 to 3.6V 150ns -40 to +85℃ 1010 (10 billion) times TSOP-44
MB85R4001A
ENG(972 KB)
CHN(1.29 MB )
4Mbit(256K×16) 3.0 to 3.6V 150ns -40 to +85℃ 1010 (10 billion) times TSOP-48
MB85R4002A
ENG(1,005 KB)
CHN(1.53 MB )
4Mbit(256K×16) 3.0 to 3.6V 150ns -40 to +85℃ 1010 (10 billion) times TSOP-48
MB85R1001A
ENG(969 KB)
CHN(1.30 MB )
1Mbit128K×8) 3.0 to 3.6V 150ns -40 to +85℃ 1010(10 billion) times TSOP-48
MB85R1002A
ENG(1,001 KB )
CHN(1.32 MB )
1Mbit(64K×16) 3.0 to 3.6V 150ns -40 to +85℃ 1010 (10 billion) times TSOP-48
MB85R256F
ENG (1.61 MB )
CHN (2.30 MB )
512Kbit(32K×8) 2.7 to 3.6V 150ns -40 to +85℃ 1012 (1 trillion) times TSOP-28,
SOP-28

FRAM Product Lineup

In future, we will develop our technology to improve specs such as operation voltage and access speed, and provide a variety of products. Fujitsu Semiconductor is able to provide a range of stand-alone FRAM products by our differentiated technology which other companies cannot provide.
4Kbit to 4Mbit products are now available in production.
Fujitsu is offering the engineering samples or production samples for customer evaluation. Please confirm our FRAM Product Lineup below and request us samples and/or documents by the "FRAM Sample/Document Request & Inquiry Form" if you would like to have.


* Product name in the table is linked to each data sheet.

What is FRAM?

LSI for RFID

Authentication IC

Applications

Custom LSI

Technical Support

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