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  7. Fujitsu Introduces New 128Mbit Mobile FCRAM Complying with COSMORAM Rev.3

Fujitsu Introduces New 128Mbit Mobile FCRAM Complying with COSMORAM Rev.3

Fujitsu Microelectronics (Shanghai) Company Limited

Shanghai, November 09, 2004

Fujitsu Microelectronics Asia Pte Ltd today announced the sample availability of a new 128Mbit Mobile Fast Cycle RAMTM(1) device that adopts burst mode operations complying with Common Specifications for Mobile RAM (COSMORAM(2)) Revision 3, for use in mobile phone applications. The device's high-speed performance and large density make it ideal for 3G mobile phone vendors looking to provide advanced applications.

The new 128Mbit device "MB82DBS04314C" and "MB82DBS08164C" achieves maximum burst operation frequency of up to 108MHz with a single 1.8V supply voltage, which satisfies the memory requirement for next generation mobile phone applications. The device provides a high data transfer rate as burst mode enables fast successive read/write operation through synchronisation with the system clock.

The maximum standby current of 300μA can be dramatically cut by user configurable power-down modes such as sleep mode and partial power-down mode. In addition, "MB82DBS04314C" is the first 128M PSRAM in the world that adopts a 32 bit address/data multiplexed bus to realise more than double the data transfer rate compared with existing products, by extension of the data bus width, and reduces the pin-count for easier customer board design.

These sample devices will be available in a monolithic package, and chip or wafer form for embedded applications, including use in multi chip package memory solutions.

This announcement underlines Fujitsu's commitment to the continued development and production of high value-added Application-Specific Memory products, in response to customer requirements.

Main Specifications

Part Number MB82DBS04314C MB82DBS08164C
Density 128Mbit
I/O Configuration x32 Address/Data multiplex bus x16
Supply Voltage VDD 1.7 ~ 1.95 V
Burst Operation Frequency 108MHz
Clock Access Time (Max) tAC 6 ns
Random Access Time (Max) tCE 70 ns
Standby Current (Max) IDDS1 300 μA
Power Down Current (Max) IDDPS 10 μA

  • [1] Fast Cycle RAMTM

    Fujitsu's unique core technology with features of high-speed and low power consumption. Mobile FCRAM is pseudo static RAM, with an SRAM interface on a FCRAM core.

  • [2] COSMORAM

    Common specifications for next generation mobile pseudo SRAM user interface announced by Fujitsu, NEC Electronics, and Toshiba on February 17, 2003.

About Fujitsu Microelectronics (Shanghai) Co.,Ltd.

Fujitsu Microelectronics (Shanghai) Co., Ltd. was established in August 2003 as Fujitsu’s semiconductor business representative in China. Headquartered in Shanghai, it has branch offices in Beijing, Shenzhen and Dalian to provide sales and service support to customers throughout China.
Fujitsu Microelectronics (Shanghai) Co., Ltd. offers an extensive range of products from microcontroller, application-specific integrated circuit (ASIC), application-specific standard product (ASSP), system-on-chip (SoC) to system memory, that can be supplied as product or complete solution. With technology resource centres and ASIC design support centres strategically located in Shanghai, Hong Kong, and Taiwan, as well as Heavy investments in design and engineering capabilities and application support resources, complemented by a regional network of design partners, suppliers and distributors, Fujitsu Microelectronics (Shanghai) Co., Ltd. can readily delivers innovative and value-added solutions and varied range of products to its target markets in China.
For more information, please see:

Marketing Manager:Miao Cao

Phone: Phone: +86-21-6335-1565
Fax: +86-21-6335-1605
E-mail: E-mail:
Company:Fujitsu Microelectronics (Shanghai) Co., Ltd.

Marketing Manager:Galvin Lian

Phone: Phone: +86-21-6335-1560
Fax: +86-21-6335-1610
E-mail: E-mail:
Company:Fujitsu Microelectronics (Shanghai) Co., Ltd.

Trademark Notice: FCRAM is a trademark of Fujitsu Ltd. All other company/product names mentioned herein are trademarks or registered trademarks of their respective companies.

Press Release ID: 2004-11-09
Date: 09 November, 2004
City: Shanghai
Company: Fujitsu Microelectronics (Shanghai) Co., Ltd.


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