GigaModule 4

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Key Features

• Narrow IVH Pitch
• Including Stacked Laser VIA
• Low V/G Inductance

Build Up Layer

• Dielectric thickness: 30μm
• Min. via dia: 60μm
• Pattern thickness: 20μm
• Min.Line/Space:
  20/20μm (2003)
  15/15μm (2004)
• Via Land dia: 100μm
• Min. via pitch: 120μm ~pad only

Surface

• S/M thickness: 25μm
• Pattern thickness: 20μm
• Via Land dia: 100μm
• S/M opening dia: 75μm
• Min. C4 pitch:120μm ~pad only