Memory Press Releases
FCRAM
- July 1, 2008 Sunnyvale, CA
- New Consumer FCRAM from Fujitsu Microelectronics Delivers Fast Data Transfer with Very Low Power
Sunnyvale, CA, July 1, 2008 – 256Mbit FCRAM Ideal for Digital TVs, Camcorders, and Other Digital Consumer Electronics
- December 4, 2006 Sunnyvale, CA
- Fujitsu Introduces New Low Power 256Mbit FCRAM™ for Mobile Applications
Sunnyvale, CA, December 4, 2006 – Compliant with COSMORAM Rev 4, provides high speed and low power
- November 8, 2004 Sunnyvale, CA
- Fujitsu Introduces New 128Mbit Mobile FCRAM for Advanced Cellular Phone Applications
Sunnyvale, CA, November 8, 2004 – Fujitsu Microelectronics America, Inc. (FMA) today announced the sample availability of a new 128Mbit Mobile Fast Cycle RAM (FCRAM™) device that adopts burst mode operations complying with Common Specifications for Mobile RAM (COSMORAM) Revision 3, for use in mobile phone applications. The device's high-speed performance and density make it ideal for advanced applications in 3G mobile phones.
- August 25, 2003 Sunnyvale, CA
- Fujitsu Introduces New 128Mbit Burst Mode Mobile FCRAM
Sunnyvale, CA, August 25, 2003 – Fujitsu Microelectronics America, Inc. (FMA) has introduced a new 128Mbit mobile FCRAM device based on the company's Fast Cycle RAM (FCRAMTM) architecture.
- May 21, 2003 Sunnyvale, CA
- Fujitsu Introduces Two Mobile FCRAM Burst Mode Devices for 3G Cellular Phones
Sunnyvale, CA, May 21, 2003 – Complies with Common Specifications for Mobile RAM (COSMORAM)
- February 17, 2003 San Jose, CA and Tokyo
- Fujitsu, NEC and Toshiba Agree on Common Specifications for “Burst Mode" Pseudo SRAM User Interface
San Jose, CA and Tokyo, February 17, 2003 – Fujitsu Microelectronics America, Inc. (FMA), Fujitsu Limited, NEC Electronics Corporation and Toshiba Corporation announced today that they have reached an agreement on common specifications for Pseudo Static Random Access Memory (PSRAM) devices that feature burst mode function enabling fast access operation. Each of the three companies will independently manufacture and market PSRAM products based on the common specifications, which are to be called Common Specifications for Mobile RAM (COSMORAM), with product introduction expected to begin in the first half of fiscal 2003.
- October 31, 2002 San Jose, CA
- Fujitsu Introduces High-Density Six-Chip Stacked Memory MCP for Cellular Applications
San Jose, CA, October 31, 2002 – Advanced New PS-MCP Technology Serves Exciting New Cellular Telephone Capabilities
- September 17, 2002 Tokyo, Japan and San Jose, CA
- Fujitsu Adds Two New High-Performance Mobile FCRAM Devices to its Growing PSRAM Product Range
Tokyo, Japan and San Jose, CA, September 17, 2002 – Market research firm iSuppli Corporation has named Fujitsu the #2 ASIC supplier worldwide, it was announced today. According to the "Going, Going, Gone - Is There a Place for Second-Tier ASIC Suppliers?" report published in July 2002, Fujitsu moved up two places in 2001, and is now second only to IBM in worldwide ASIC revenue.
- January 21, 2002 Irvine and San Jose, CA
- Fujitsu and Toshiba Announce Second-Generation FCRAMTM with Enhanced Performance
Irvine and San Jose, CA, January 21, 2002 – Latest Generation Meets Increasing Demand for Higher Performance in Networking and Communications Markets
- October 22, 2001 Allentown, PA and San Jose, CA
- Agere Systems selects Fujitsu's Fast Cycle RAM
Allentown, PA and San Jose, CA, October 22, 2001 – FCRAM™ provides required low latency, high bandwidth, fast random cycle times for high-speed networks
- April 19, 2001 San Jose, CA
- Fujitsu Introduces 64 Megabit Dual-Operation Flash Memory with 32 Megabit Mobile FCRAM
San Jose, CA, April 19, 2001 – Designed for Next Generation of Cell Phones Now in Planning Stages in U.S.
- March 19, 2001 San Jose, CA
- Fujitsu Introduces 256 Megabit High-Speed FCRAM with Double Data Rate SDRAM Interface
San Jose, CA, March 19, 2001 – Meets Network Equipment Manufacturers' Demands for Higher Speed and Bandwidth
- March 7, 2001 San Jose, CA
- Fujitsu Introduces Industry's First Stacked MCP with NAND Flash Memory and FCRAM
San Jose, CA, March 7, 2001 – Features Cost-Effective, High Density Data Storage for Video, Games, in New Cell Phones
FRAM
- November 12, 2007 Tokyo, Japan
- Fujitsu Launches World's First Embedded-FRAM LSI for Digital TV that Enables Simultaneous Use of 4-channel HDMI™ Connector
Ports
Tokyo, Japan, November 12, 2007 – Fujitsu Limited today announced its development of the world's first embedded-FRAM LSI for digital TVs that enables simultaneous use of four-channel High-Definition Multimedia Interface (HDMI™) connector ports - such as for multiple DVD recorders, camcorders, and video game consoles - and which stores display data, such as resolution, that is read by audio-visual digital entertainment devices when they are used with digital TVs. Sample shipment of the new LSI, MB85RF402, starts from November 12, 2007.
- April 18, 2007 Sunnyvale, CA
- Fujitsu Announces Volume Production of 2Mbit FRAM ICs; New Non-volatile, Low-Power ICs Serve Automotive, Printer, Instrumentation
Applications
Sunnyvale, CA, April 18, 2007 – Fujitsu Microelectronics America, Inc. (FMA) today announced the availability of two new 2Mbit ferroelectric memory (FRAM) ICs, the industry’s highest capacity FRAMs now in volume production.
- August 2, 2006 Sunnyvale, CA
- Fujitsu and Tokyo Institute of Technology Announce the Development of New Material for 256Mbit FeRAM Using 65-nanometer
Technology
Sunnyvale, CA, August 2, 2006 – FeRAMs to Provide Very Low Power, High Speeds for New Mobile Electronic Products
- August 9, 2005 Sunnyvale, CA
- Fujitsu Introduces New, Light, Cost-Effective RFID Tags with 256 Bytes of FRAM for Product Tracking, Distribution Applications
Sunnyvale, CA, August 9, 2005 – Fujitsu Microelectronics America, Inc. (FMA) today introduced the newest member of its FerVID family of RFID tags, the MB89R119, which incorporates 256 bytes of FRAM and operates at approximately 50 times the speed of tags that use EEPROM.
- June 15, 2005 Sunnyvale, CA
- Fujitsu and Epson Announce Joint Development of Next-generation Technology for FRAM Non-Volatile Memory
Sunnyvale, CA, June 15, 2005 – Fujitsu Limited ("Fujitsu") and Seiko Epson ("Epson") today announced their agreement for joint development of next-generation technology for Ferroelectric Random Access Memory (FRAM) (1)non-volatile memory(2).
- November 17, 2004 Sunnyvale, CA
- Fujitsu Launches High-Capacity, Next-Generation Non-Volatile Memory
Sunnyvale, CA, November 17, 2004 – Fujitsu Microelectronics America, Inc. (FMA) today introduced its 1MBit FRAM (Ferroelectric Random Access Memory), the highest-ever capacity FRAM ever developed. The new FRAM also features high-speed read-and-write operations, low power consumption, and high endurance.
- September 9, 2003 Sunnyvale, CA
- Fujitsu Announces New FRAM ICs for Security
Sunnyvale, CA, September 9, 2003 – Company Extends Leadership in Advanced Memory Technology with Embedded and Standalone FRAM Devices
