Memory
FRAM Overview
What is FRAM?
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory combining both ROM and RAM advantages in addition to
non-volatility features. Its higher speed in write mode, its lower power consumption as well as its higher endurance, make
FRAM superior to any other memory type. As a high-speed non-volatile memory, FRAM can be used in the wide range of offerings.
FRAM Benefits
- High speed
- High security
- Low power consumption
- Minimum 10 year data retention
- High endurance of minimum 10E10
- Random access
- Byte access
- Low cell internal voltage of 5G for 0.5um and 3.3V for 0.35um
- No need for booster circuit for voltage matching with CMOS
FRAM™ Advantages over EEPROM
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1. Transaction Time: - 30,000 times faster than EEROM - 1kByte R/W as a general use in transportation (contact-less cards) |
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2. Energy Consumption: - 100,000 times higher endurance over EEPROM - Energy Consumption @64Byte Write Cycle |
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3. Endurance: - 200 times lower power consumption compare to EEPROM - 1 FRAM Cycle: Read - 1 E2PROM Cycle: Erase/Write/Read |
FRAM Comparison with other memory products
| FRAM | EEPROM | Flash | |
| Nonvaolatile Principle | Ferroelectricity | Charge Storage | Charge Storage |
| Cell Access Mode | Random | Random | Random & Serial |
| Read Cycle | 85 -110nsec | 200nsec | 90nsec |
| Internal Program Voltage | 5V/3.3V | 18V | 12V |
| Write Cycle | 85-110nsec | 5msec | 1sec |
| Program Block | Byte | Sector | Sector |
| Endurance | 1010 | 105 | 105 |
| Data Retention | 10 years | 10 years | 10 years |
| Scalability | Good | Restricted | Restricted |
| CMOS Compatibility | Good | Restricted | Restricted |
