Overview | Mobile FCRAM | Consumer FCRAM | Extended Temp. FCRAM |
Low Power Consumption Memory for Digital Consumer Electronics (x64, Low Power DDR SDRAM, SiP-optimized) 256M-bit & 512M-bit Consumer FCRAM
Fujitsu 256Mbit and 512Mbit Consumer FCRAM features very low power and high throughput for digital consumer electronics products. They are ideal for system-in-package (SiP) designs that feature small mounting spaces on circuit boards and reduced component costs. They also support an operating temperature of up to 125°C. They offer the best value memory systems for digital consumer electronics.
Features
Operating Temperature of up to 125°C
- Conventional SDRAM such as DDR2 SDRAM or Low Power DDR SDRAM can only support a maximum operating temperature of 95°C, which
causes a thermal design problem in high power consuming SoCs. The Fujitsu high temperature FCRAM with maximum 125°C operation
solves the thermal design problem and SiP and can be used for variety of applications.
PDF Case Study of SiP Thermal Design (54KB)
Low Power Consumption
- DDR2 SDRAM and other high-speed memory interfaces require a termination resistor to maintain stable signals. These resistors
are responsible for much of the total power consumption in such applications. The new FCRAM eliminates the need for resistors
by using a wide 64-bit I/O bus, so that it can run at a lower operating frequency. The result is performance equivalent to
two 16-bit DDR2 SDRAMs with 16-bit I/O interfaces, with about one full Watt less total power consumption. This equates to
a 70 percent reduction compared with prior requirements. A significant proportion of the DDR2 SDRAM’s total power consumption
has been accounted for by the terminating resistors; eliminating them makes a significant contribution to power savings.
PDF Power Consumption Comparison between DDR2/LPDDR and FCRAM (50KB)
High Data Bandwidth
- x64-bit I/O FCRAM realizes high data transfer rate equivalent to twice that of standard DDR memories.
- Operating frequencies up to 216MHz under 105°C , and 200MHz under 125°C .
PDF Feature Comparison between Standard DRAM and FCRAM(41KB)
Main Specifications
| Part Number | MB81EDS256545 | MB81EDS516545 |
|---|---|---|
| Organization | 1M-word x 64-bit x 4-bank | 2M-word x 64-bit x 4-bank |
| Interface | Low Power DDR | |
| Supply Voltage | 1.7V to 1.9V | |
| Operating Voltage (Tj) | -10°C to +125°C | |
| Burst Operating Frequency | Tj≤105°C 216MHz (Max.) | |
| Tj≤125°C 200MHz (Max.) | ||
| Data Transfer Rate | Tj≤105°C 3.46GByte/s (Max.) | |
| Tj≤125°C 3.2GByte/s (Max.) | ||
Technical Support
Fujitsu offers technical support tools to help customers’ product development. They include simulation models for memory verification, a memory controller for interface support, and a FPGA optional evaluation board.
- Memory Controller
- FPGA Evaluation Board (Optional Board)
- Simulation Model
- IBIS Model
- Verilog Model
- SOMA Model (Supported by Denali Software, Inc.)
- BFM (Bus Function Model)
- ESL (Electric System Level)
256M-bit Consumer FCRAM Family for 125ºC Sip
| Density (Bit) | Interface | I/O (bit) | Supply Voltage (V) | Operating Frequency (MHz) | Junction Temp. Tj (ºC) |
Part Number |
|---|---|---|---|---|---|---|
| 256M | SDR | x 32 | 1.7 to 1.95 | 116 | -10 to +125 | MB81ES253245 |
| x 64 | 1.7 to 1.95 | 116 | -10 to +125 | MB81ES256445 | ||
| DDR | x 32 | 1.7 to 1.95 | 216 | -10 to +125 | MB81EDS253245 | |
| x 64 | 1.7 to 1.95 | 216 | -10 to +125 | MB81EDS256445 | ||
| MB81EDS256545 with special function |
512M-bit Consumer FCRAM Family for 125ºC Sip
| Density (Bit) | Interface | I/O (bit) | Supply Voltage (V) | Operating Frequency (MHz) | Junction Temp. Tj (ºC) |
Part Number |
|---|---|---|---|---|---|---|
| 512M | DDR | x 64 | 1.7 to 1.9 | 216 | -10 to +125 | MB81EDS516445 |
| MB81EDS516545 with special function |

