FCRAM™
Fast Cycle RAM (FCRAM) features a RAM core architecture and high-speed performance with low power consumption. The FCRAM core architecture has been applied to two FCRAM product families: Mobile FCRAM and Consumer FCRAM.
FCRAM Product Lineup
Mobile FCRAM (PSRAM):
| Density (Voltage) | Part Number |
|---|---|
| 32Mbit (3V) | MB82DP02183F |
| 32Mbit (1.8V) | MB82DBS02163F |
| 128Mbit (1.8V) | MB82DBS08164D |
Consumer FCRAM (Low Power SDR/DDR SDRAM):
| Density (Voltage) | Part Number |
|---|---|
| 16Mbit | MB81ES171625/173225 |
| 16Mbit (Extended Temp.) | MB81ES171625/173225 |
| 256Mbit (x64, LP-DDR) | 256M/512M-bit Consumer FCRAM |
| 256Mbit (x32, LP-DDR) | MB81EDS253245 |
| 256Mbit (x64, LP-SDR) | MB81ES256445 |
| 256Mbit (x32, LP-SDR) | - |
PSRAM (Pseudo SRAM): Mobile FCRAM
Mobile FCRAM is PSRAM (Pseudo SRAM) that was developed for cellular phones. The Fujitsu Mobile FCRAM interface is based on asynchronous SRAM and supports page mode and synchronous burst mode for high-speed read and write operation with low power consumption. Mobile FCRAMs are ideal for general mobile applications such as smart phones, PDAs, portable media players (PMPs), and portable games.
Mobile FCRAM(PSRAM) Features
- Low Power SRAM Compatible interface
- Asynchronous Operation
- Refresh Free - Large Density
- Offering larger density than conventional SRAM
- 32Mbit and 128Mbit in production now - Low Power Design
- Same or less active power than SRAM
- Very low data retention current compare to regular DRAM
Mobile FCRAM(PSRAM) Product Lineup
| Density | Configuration | Voltage | Access Time | Page Mode Access Time | Burst Mode Frequency | Burst Mode Access Time | Part Number |
|---|---|---|---|---|---|---|---|
| 32Mbit | 2M x16 | 3V | 65ns | 20ns | N/A | N/A | MB82DP02183F |
| 32Mbit | 2M x16 | 1.8V | 70ns | 20ns | 83MHz | 8ns | MB82DBS02163F |
| 128Mbit | 8M x16 | 1.8V | 70ns | N/A | 77MHz | 6ns | MB82DBS08164D |
Target Applications for Mobile FCRAM
|
Technical Notes
PDF Feature Comparison between Mobile FCRAM and SRAM
PDF Cellular phone block diagram
PDF How to replace SRAM with PSRAM (FCRAM)
Low Power SDR/DDR SDRAM: Consumer FCRAM
Consumer FCRAM is low power SDR/DDR SDRAM and well suited for digital consumer electronics such as digital televisions and camcorders, which require high-speed data transfer and low power consumption. The Fujitsu Consumer FCRAM is optimal for System in Package (SiP) configuration, which provides customers with better product performance at less cost.
Product Introduction
256/512Mbit Consumer FCRAM (Extending temp. range to 125°C)
Consumer FCRAM (Low Power SDR/DDR SDRAM) Features
- Low Power SDR/DDR SDRAM Compatible Interface
- Low Power Consumption
- Wide Data Bus
- x64 (512Mbit, 256Mbit)
- x32 (256Mbit, 16Mbit) - Low Operating Voltage
- 1.8V - Extended Temperature Range
- Max. 125ºC (512Mbit, 256Mbit, 16Mbit) - DFT Function for SiP Test
Consumer FCRAM (PSRAM) Product Lineup
| Density | Interface | Configuration (word x bit x bank) | Voltage | Clock Frequency | Clock Cycle Time | Access Time | Part Number |
|---|---|---|---|---|---|---|---|
| 16Mbit | SDR | 512K x 16 x 2 | 1.8V | 85/66.7MHz | 11.7/15ns | 10.2/12 | MB81ES171625 |
| 16Mbit | SDR | 256K x 32 x 2 | 1.8V | 85/66.7MHz | 11.7/15ns | 10.2/12 | MB81ES173225 |
| 256Mbit | SDR | 2M x 32 x 4 | 1.8V | 166MHz | 6ns | 6ns | MB81ES253245 |
| 256Mbit | SDR | 1M x 64 x 4 | 1.8V | 166MHz | 6ns | 6ns | MB81ES256445 |
| 256Mbit | DDR | 2M x 32 x 4 | 1.8V | 216MHz | 4.6ns | 6ns | MB81EDS253245 |
| 256Mbit | DDR | 1M x 64 x 4 | 1.8V | 216MHz | 4.6ns | 6ns | MB81EDS256445 |
| 256Mbit | DDR | 1M x 64 x 4 | 1.8V | 216MHz | 4.6ns | 6ns | MB81EDS256545 |
| 512Mbit | DDR | 2M x 64 x 4 | 1.8V | 216MHz | 4.6ns | 6ns | MB81EDS516445 |
| 512Mbit | DDR | 2M x 64 x 4 | 1.8V | 216MHz | 4.6ns | 6ns | MB81EDS516545 |
Target Applications for Consumer FCRAM
|
Technical Notes
PDF Position of Consumer FCRAM
PDF DSC/DVC block diagram
PDF Feature comparison between competitive RAM and FCRAM
PDF Benefit of using FCRAM with SiP
PDF RAM’s Power Consumption Comparison
Low Power Consumption Memory for Digital Consumer Electronics (x64, Low Power DDR SDRAM, SiP-optimized) 256M-bit & 512M-bit Consumer FCRAM
Fujitsu 256Mbit and 512Mbit Consumer FCRAM features very low power and high throughput for digital consumer electronics products. They are ideal for system-in-package (SiP) designs that feature small mounting spaces on circuit boards and reduced component costs. They also support an operating temperature of up to 125°C. They offer the best value memory systems for digital consumer electronics.
Features
Operating Temperature of up to 125°C
- Conventional SDRAM such as DDR2 SDRAM or Low Power DDR SDRAM can only support a maximum operating temperature of 95°C, which
causes a thermal design problem in high power consuming SoCs. The Fujitsu high temperature FCRAM with maximum 125°C operation
solves the thermal design problem and SiP and can be used for variety of applications.
PDF Case Study of SiP Thermal Design (54KB)
Low Power Consumption
- DDR2 SDRAM and other high-speed memory interfaces require a termination resistor to maintain stable signals. These resistors
are responsible for much of the total power consumption in such applications. The new FCRAM eliminates the need for resistors
by using a wide 64-bit I/O bus, so that it can run at a lower operating frequency. The result is performance equivalent to
two 16-bit DDR2 SDRAMs with 16-bit I/O interfaces, with about one full Watt less total power consumption. This equates to
a 70 percent reduction compared with prior requirements. A significant proportion of the DDR2 SDRAM’s total power consumption
has been accounted for by the terminating resistors; eliminating them makes a significant contribution to power savings.
PDF Power Consumption Comparison between DDR2/LPDDR and FCRAM (50KB)
High Data Bandwidth
- x64-bit I/O FCRAM realizes high data transfer rate equivalent to twice that of standard DDR memories.
- Operating frequencies up to 216MHz under 105°C , and 200MHz under 125°C .
PDF Feature Comparison between Standard DRAM and FCRAM(41KB)
Main Specifications
| Part Number | MB81EDS256545 | MB81EDS516545 |
|---|---|---|
| Organization | 1M-word x 64-bit x 4-bank | 2M-word x 64-bit x 4-bank |
| Interface | Low Power DDR | |
| Supply Voltage | 1.7V to 1.9V | |
| Operating Voltage (Tj) | -10°C to +125°C | |
| Burst Operating Frequency | Tj≤105°C 216MHz (Max.) | |
| Tj≤125°C 200MHz (Max.) | ||
| Data Transfer Rate | Tj≤105°C 3.46GByte/s (Max.) | |
| Tj≤125°C 3.2GByte/s (Max.) | ||
Technical Support
Fujitsu offers technical support tools to help customers’ product development. They include simulation models for memory verification, a memory controller for interface support, and a FPGA optional evaluation board.
- Memory Controller
- FPGA Evaluation Board (Optional Board)
- Simulation Model
- IBIS Model
- Verilog Model
- SOMA Model (Supported by Denali Software, Inc.)
- BFM (Bus Function Model)
- ESL (Electric System Level)
256M-bit Consumer FCRAM Family for 125ºC Sip
| Density (Bit) | Interface | I/O (bit) | Supply Voltage (V) | Operating Frequency (MHz) | Junction Temp. Tj (ºC) |
Part Number |
|---|---|---|---|---|---|---|
| 256M | SDR | x 32 | 1.7 to 1.95 | 116 | -10 to +125 | MB81ES253245 |
| x 64 | 1.7 to 1.95 | 116 | -10 to +125 | MB81ES256445 | ||
| DDR | x 32 | 1.7 to 1.95 | 216 | -10 to +125 | MB81EDS253245 | |
| x 64 | 1.7 to 1.95 | 216 | -10 to +125 | MB81EDS256445 | ||
| MB81EDS256545 with special function |
512M-bit Consumer FCRAM Family for 125ºC Sip
| Density (Bit) | Interface | I/O (bit) | Supply Voltage (V) | Operating Frequency (MHz) | Junction Temp. Tj (ºC) |
Part Number |
|---|---|---|---|---|---|---|
| 512M | DDR | x 64 | 1.7 to 1.9 | 216 | -10 to +125 | MB81EDS516445 |
| MB81EDS516545 with special function |



