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FCRAM™

Fast Cycle RAM (FCRAM) features a RAM core architecture and high-speed performance with low power consumption. The FCRAM core architecture has been applied to two FCRAM product families: Mobile FCRAM and Consumer FCRAM.

FCRAM Product Lineup

Mobile FCRAM (PSRAM):

Density (Voltage) Part Number
32Mbit (3V) MB82DP02183F
32Mbit (1.8V) MB82DBS02163F
128Mbit (1.8V) MB82DBS08164D

Consumer FCRAM (Low Power SDR/DDR SDRAM):

Density (Voltage) Part Number
16Mbit MB81ES171625/173225
16Mbit (Extended Temp.) MB81ES171625/173225
256Mbit (x64, LP-DDR) 256M/512M-bit Consumer FCRAM
256Mbit (x32, LP-DDR) MB81EDS253245
256Mbit (x64, LP-SDR) MB81ES256445
256Mbit (x32, LP-SDR) -

PSRAM (Pseudo SRAM): Mobile FCRAM

Mobile FCRAM is PSRAM (Pseudo SRAM) that was developed for cellular phones. The Fujitsu Mobile FCRAM interface is based on asynchronous SRAM and supports page mode and synchronous burst mode for high-speed read and write operation with low power consumption. Mobile FCRAMs are ideal for general mobile applications such as smart phones, PDAs, portable media players (PMPs), and portable games.

Mobile FCRAM(PSRAM) Features

  • Low Power SRAM Compatible interface
    - Asynchronous Operation
    - Refresh Free
  • Large Density
    - Offering larger density than conventional SRAM
    - 32Mbit and 128Mbit in production now
  • Low Power Design
    - Same or less active power than SRAM
    - Very low data retention current compare to regular DRAM

Mobile FCRAM(PSRAM) Product Lineup

Density Configuration Voltage Access Time Page Mode Access Time Burst Mode Frequency Burst Mode Access Time Part Number
32Mbit 2M x16 3V 65ns 20ns N/A N/A MB82DP02183F
32Mbit 2M x16 1.8V 70ns 20ns 83MHz 8ns MB82DBS02163F
128Mbit 8M x16 1.8V 70ns N/A 77MHz 6ns MB82DBS08164D

Target Applications for Mobile FCRAM

  • Cellular Phone
  • Smart Phone
  • PDA
  • Portable Media Player (PMP)
  • Portable Game
  • Electric Dictionary

Technical Notes

PDF Feature Comparison between Mobile FCRAM and SRAM

PDF Cellular phone block diagram

PDF How to replace SRAM with PSRAM (FCRAM)


Low Power SDR/DDR SDRAM: Consumer FCRAM

Consumer FCRAM is low power SDR/DDR SDRAM and well suited for digital consumer electronics such as digital televisions and camcorders, which require high-speed data transfer and low power consumption. The Fujitsu Consumer FCRAM is optimal for System in Package (SiP) configuration, which provides customers with better product performance at less cost.

Product Introduction

256/512Mbit Consumer FCRAM (Extending temp. range to 125°C)

Consumer FCRAM (Low Power SDR/DDR SDRAM) Features

  • Low Power SDR/DDR SDRAM Compatible Interface
  • Low Power Consumption
  • Wide Data Bus
    - x64 (512Mbit, 256Mbit)
    - x32 (256Mbit, 16Mbit)
  • Low Operating Voltage
    - 1.8V
  • Extended Temperature Range
    - Max. 125ºC (512Mbit, 256Mbit, 16Mbit)
  • DFT Function for SiP Test

Consumer FCRAM (PSRAM) Product Lineup

Density Interface Configuration (word x bit x bank) Voltage Clock Frequency Clock Cycle Time Access Time Part Number
16Mbit SDR 512K x 16 x 2 1.8V 85/66.7MHz 11.7/15ns 10.2/12 MB81ES171625
16Mbit SDR 256K x 32 x 2 1.8V 85/66.7MHz 11.7/15ns 10.2/12 MB81ES173225
256Mbit SDR 2M x 32 x 4 1.8V 166MHz 6ns 6ns MB81ES253245
256Mbit SDR 1M x 64 x 4 1.8V 166MHz 6ns 6ns MB81ES256445
256Mbit DDR 2M x 32 x 4 1.8V 216MHz 4.6ns 6ns MB81EDS253245
256Mbit DDR 1M x 64 x 4 1.8V 216MHz 4.6ns 6ns MB81EDS256445
256Mbit DDR 1M x 64 x 4 1.8V 216MHz 4.6ns 6ns MB81EDS256545
512Mbit DDR 2M x 64 x 4 1.8V 216MHz 4.6ns 6ns MB81EDS516445
512Mbit DDR 2M x 64 x 4 1.8V 216MHz 4.6ns 6ns MB81EDS516545

Target Applications for Consumer FCRAM

  • Digital TV (LCD, PDP)
  • Digital Still Camera (DSC)
  • Digital Video Camera (DVC)/Camcorder
  • Digital Video Recorder (DVR)

Technical Notes

PDF Position of Consumer FCRAM

PDF DSC/DVC block diagram

PDF Feature comparison between competitive RAM and FCRAM

PDF Benefit of using FCRAM with SiP

PDF RAM’s Power Consumption Comparison


Low Power Consumption Memory for Digital Consumer Electronics (x64, Low Power DDR SDRAM, SiP-optimized) 256M-bit & 512M-bit Consumer FCRAM

Fujitsu 256Mbit and 512Mbit Consumer FCRAM features very low power and high throughput for digital consumer electronics products. They are ideal for system-in-package (SiP) designs that feature small mounting spaces on circuit boards and reduced component costs. They also support an operating temperature of up to 125°C. They offer the best value memory systems for digital consumer electronics.

Features

Operating Temperature of up to 125°C

  • Conventional SDRAM such as DDR2 SDRAM or Low Power DDR SDRAM can only support a maximum operating temperature of 95°C, which causes a thermal design problem in high power consuming SoCs. The Fujitsu high temperature FCRAM with maximum 125°C operation solves the thermal design problem and SiP and can be used for variety of applications.

    PDF Case Study of SiP Thermal Design (54KB)

Low Power Consumption

  • DDR2 SDRAM and other high-speed memory interfaces require a termination resistor to maintain stable signals. These resistors are responsible for much of the total power consumption in such applications. The new FCRAM eliminates the need for resistors by using a wide 64-bit I/O bus, so that it can run at a lower operating frequency. The result is performance equivalent to two 16-bit DDR2 SDRAMs with 16-bit I/O interfaces, with about one full Watt less total power consumption. This equates to a 70 percent reduction compared with prior requirements. A significant proportion of the DDR2 SDRAM’s total power consumption has been accounted for by the terminating resistors; eliminating them makes a significant contribution to power savings.

    PDF Power Consumption Comparison between DDR2/LPDDR and FCRAM (50KB)

High Data Bandwidth

  • x64-bit I/O FCRAM realizes high data transfer rate equivalent to twice that of standard DDR memories.
  • Operating frequencies up to 216MHz under 105°C , and 200MHz under 125°C .

    PDF Feature Comparison between Standard DRAM and FCRAM(41KB)

Main Specifications

Part Number MB81EDS256545 MB81EDS516545
Organization 1M-word x 64-bit x 4-bank 2M-word x 64-bit x 4-bank
Interface Low Power DDR      
Supply Voltage 1.7V to 1.9V          
Operating Voltage (Tj) -10°C to +125°C      
Burst Operating Frequency Tj≤105°C       216MHz (Max.)
Tj≤125°C       200MHz (Max.)
Data Transfer Rate     Tj≤105°C      3.46GByte/s (Max.)
   Tj≤125°C       3.2GByte/s (Max.)

Technical Support

Fujitsu offers technical support tools to help customers’ product development. They include simulation models for memory verification, a memory controller for interface support, and a FPGA optional evaluation board.

  • Memory Controller
  • FPGA Evaluation Board (Optional Board)
  • Simulation Model
    - IBIS Model
    - Verilog Model
    - SOMA Model (Supported by Denali Software, Inc.)
    - BFM (Bus Function Model)
    - ESL (Electric System Level)

256M-bit Consumer FCRAM Family for 125ºC Sip

Density (Bit) Interface I/O (bit) Supply Voltage (V) Operating Frequency (MHz) Junction Temp.
Tj (ºC)
Part Number
256M SDR x 32 1.7 to 1.95 116 -10 to +125 MB81ES253245
x 64 1.7 to 1.95 116 -10 to +125 MB81ES256445
DDR x 32 1.7 to 1.95 216 -10 to +125 MB81EDS253245
x 64 1.7 to 1.95 216 -10 to +125 MB81EDS256445
MB81EDS256545
with special function

512M-bit Consumer FCRAM Family for 125ºC Sip

Density (Bit) Interface I/O (bit) Supply Voltage (V) Operating Frequency (MHz) Junction Temp.
Tj (ºC)
Part Number
512M DDR x 64 1.7 to 1.9 216 -10 to +125 MB81EDS516445
MB81EDS516545
with special function