FRAM

FRAM Documentation

• 1M-bit (x8/x16) FRAM, MB85R1001/MB85R1002 (Article)

  This products is a FRAM of 1M-bit 1T1C cell design, featuring high-density, low-power consumption, and high-performance of write/read operation times.

• EDID Memory LSI with 4 DDC (I2C) Ports for Digital TVs - MB85RF402 (229KB PDF)

  Fujitsu Find Magazine: Vol.26 No.1 2008

• FRAM-Embedded Large-Capacity, High-Speed RFID LSI FerVID Family, MB89R118 (Article)

  MB89R118 is a large-capacity, high-speed RFID LSI and compliance with the international standard, ISO/IEC15693, to make the most of the efficiency. It is embedded with FRAM which can write the data twice as fast as conventional device and it has large-capacity 2Kbytes memory size.

• FRAM Low-Voltage Sensing Technology (Article)

  FUJITSU recently invented a FRAM-sensing method that can effectively apply voltage to the cell capacitor even under low-voltage power supply conditions, essentially by reading the bit-line potential in the proximity of the GND potential. This article introduces a FRAM memory voltage reduction technology that adopts this new sensing method.

• FRAM-Mounted High-Capacity, High-Speed LSI for RFID Tag MB89R116 (Article)

  A high-capacity, high-speed LSI for an RFID tag that conforms to the international
  standard, ISO/IEC15693. Capable of reading/writing the data of the maximum
  2,000 characters with 1.5sec. read time and 1.4sec. write time. Wide range of supported temperatures for use and storage, and quality/product control is possible under severe environmental conditions.

• Fujitsu Announces Volume Production of 2Mbit FRAM ICs; New Non-volatile, Low-Power ICs Serve Automotive, Printer, Instrumentation Applications

  The Fujitsu MB85R2001 and MB85R2002 feature non-volatile memory with high-speed data writing, low power consumption, and the ability to provide a high number of write cycles. They are ideal for automotive navigation systems, multi-function printers, measuring instruments, and other advanced applications that can use non-volatile memory to store various parameters, record equipment operating conditions, and preserve security information.

• Fujitsu FRAM Technology & Products (Presentation)

  FRAM overview, basics, main strengths, key features, comparison of energy consumption, FRAM Advantage of Design Rule Shrink, Fujitsu Embedded FRAM Process, FRAM Product Line-Up & Roadmap

• Fujitsu Stand Alone FRAM (Presentation)

  FRAM Positioning, Target Market, Examples of Standalone FRAM Usage

• MB85R1001 1M FRAM Specifications
• MB85R1002 1M FRAM Specifications
• MB85R256/256A FRAM Memory, CMOS, 256K (32Kx8) Bit Data Sheet

  The MB85R256/256A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

• MB89R118 ISO/IEC15693 Compliant FRAM Embedded High-speed RFID LSI Datasheet

  The MB89R118 is an LSI device that has built-in high-speed, large-capacity FRAM and is used for vicinity-RFID.

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  Redundant Circuit Technology and Variable Reference Voltage Circuit Technology for FRAM (Article)

  Fujitsu's redundant circuit technology and variable reference voltage circuit technology was selected for an excellence prize at the eighth "LSI Design of the Year" (Run by the Handolai Sangyo Shimburi) for its contributions to the commercialization of large-size FRAM.

• Security Design of Smart Cards and Secure Devices with Embedded FRAM (Article)

  Current memories implement various security functions such as parameter storage/updating, high-speed processing of cryptographic algorithms, firewalls between applications, and anti-tampering measures. This article presents the FRAM applications in cipher and security system development employing FRAM.