Fujitsu Microelectronics America, Inc.

Fujitsu Microelectronics America Introduces New 128Mbit Burst Mode Mobile FCRAM

Sunnyvale, CA, August 25, 2003 — Fujitsu Microelectronics America, Inc. (FMA) has introduced a new 128Mbit mobile FCRAM device based on the company's Fast Cycle RAM (FCRAMTM) architecture.

The new MB82DBR08163 mobile FCRAM adopts burst mode for both read and write operations compliant with the Common Specification for Mobile RAM (COSMORAM), which was announced by Fujitsu Limited, NEC Electronics Corporation and Toshiba Corporation. (See related announcement dated May 21, 2003.)

The high-density, low-power FCRAM is a pseudo-static RAM with an SRAM interface on an FCRAM core. It has been designed for third-generation mobile phones, which will offer built-in digital cameras, video data streaming and other multimedia services. The new FCRAM meets the expanding memory requirements of the 3G infrastructure and the high data rates required by mobile cellular technologies.

“This new mobile FCRAM version combines low standby power of only 200 micro-amps and 128 Megabit densities with advanced burst mode capability, making it an ideal design choice for third-generation cellular designs,᾿ said Keith Horn, vice president of marketing for Fujitsu Microelectronics America.

Like the 32Mbit and 64Mbit burst FCRAM devices announced by Fujitsu earlier, the new 128Mbit device provides burst mode operation that is compatible with Flash memory burst read operation. Consecutive read operations are synchronized to the system clock. The mobile FCRAM also carries out burst write operations.

The devices are initially operational in page mode after power on, and users then can configure them to burst mode. Maximum page mode access time is 20 nanoseconds. Burst mode operation provides an access time of 12ns at 66 MHz. In addition to the read and write access improvements, the new FCRAM delivers true continuous burst operation with no wait cycles.

In general, other burst mode Flash memory and pseudo-SRAM devices available on the market incur an output delay during the burst operation when the burst sequence crosses the device's internal cell-array boundary. However, the new 128Mbit FCRAM does not incur such a wait cycle and provides pure linear burst access, eliminating the need for the “handshake᾿ setting in system design for undetectable interrupts during burst access.

Price and Availability
The MB82DBR08163 mobile FCRAMs come in 71-pin FBGA packages, with prices starting at $18 each in 1,000 unit volumes. They are available now in either chip or wafer form.

Technical Specifications:
Part Number: MB82DBR08163
Density: 128Mbit
I/O Configuration: x16
Core Supply Voltage: VCC=2.6V to 3.1V
I/O Supply Voltage: VCCQ=1.65V to 1.95V
Various Power-Down Modes Full array, 1/4 array, or 1/8 array
Burst Frequency: 75MHz
Initial Access Time: 70ns
Page Access Time: 20ns
VDD Active Current: 35mA
VDD Standby Current: 200uA
VDD Power-Down Current: 10uA

Note to Editors:
A JPEG graphic file relevant to this release can be found by following the link:
http://www.fma.fujitsu.com/imagearchive/jpg/mb82dr08163.jpg

---

About Fujitsu Microelectronics America

Fujitsu Microelectronics America, Inc. (FMA) leads the industry in innovation. FMA provides high-quality, reliable semiconductor products and services for the networking, communications, automotive, security and other markets throughout North and South America. For product information, visit the company web site at www.fma.fujitsu.com/fcram

---

Press Contacts

---

FCRAM is a trademark of Fujitsu Limited.