Fujitsu Microelectronics America, Inc.

Fujitsu Microelectronics America Introduces 90-Nanometer Process Technology in North America

New 90-nanometer capability ready for new generation of server, network, storage, mobile products

San Jose, CA, June 4, 2002 — Fujitsu Microelectronics America, Inc. (FMA) today introduced its 90-nanometer process technology, designed for high-end servers, networks, storage and a wide range of consumer products including advanced digital cameras and low-leakage mobile devices for next-generation cellular systems. The process is ideal for advanced system-on-chip (SOC) solutions, because it doubles overall performance while reducing power by half compared with the company's 130-nanometer process technology.

"The introduction of our 90-nanometer process technology, and our substantial commitment of resources, maintain Fujitsu's world leadership position in the industry," said Shigeru Fujii, senior vice president, Fujitsu Microelectronics America. "We have begun early design and development inside Fujitsu and with partners in high-end applications that require optimal performance with the lowest possible power. The introduction of the new process technology will be supported with new libraries and tools so our customers will be able to migrate quickly and efficiently."

Fujitsu Supports Industry's Most Advanced Process Technology with $700 Million Investment
The 90-nanometer process technology is the industry's most advanced. The process uses copper and low-k dielectric material with revolutionary 193-nm wavelength argon fluoride lithography to create new ICs with 11 levels of metal. Transistors are as small as 40 nanometers, and up to 600 million transistors will be available on one device. A couple of analog components, including an on-chip inductor, will be available for RF and 10Gbit/second SERDES applications.

Fujitsu has begun prototype production of devices built using 90-nanometer technology in its Akiruno Technology Center, which consolidates all aspects of development activities from basic research to product planning, design and pilot production. Approximately $700 million is targeted for investment in the Akiruno facility for advanced deep-submicron process technology from now until the end of fiscal year 2005.

The new 90-nanometer process technology provides significant benefits in many applications. For example, ASICs and ASSPs for high-performance applications will experience added performance enhancements, including data rates up to 10Gbit/second in Internet infrastructure equipment, a significant increase of more than 300 percent over current 3.125Gbit/second solutions. Also, devices developed using the 90-nanometer technology will enable next- generation mobile handsets to process voice, video and data as much as three times faster, which will encourage and support new wireless applications.

The new 90-nanometer process technology uses three types of transistors for different functions on a single IC, in order to meet different performance, density and power consumption requirements. This allows the highest performance transistors to be used in the most critical functions, while transistors with lower power consumption are applied in support functions with narrower power requirements.

Fujitsu is now developing a set of ASIC libraries to support 1.0V or 1.2V core functions, 1.8V or 2.5V I/O interfaces, high-speed and high-density memories, and analog/mixed-signal macros including SERDES and RF using optimized analog components. A low power and low leakage ASIC library will be made available.

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About Fujitsu Microelectronics America, Inc.

Fujitsu Microelectronics America, Inc. designs, markets and supports a broad range of semiconductors and electronic devices. For product information, call 1-800-866-8608, or visit the company web site at http://www.fma.fujitsu.com

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