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  7. Fujitsu Announces Volume Production of 2Mbit FRAM ICs; New Non-volatile, Low-Power ICs Serve Automotive, Printer, Instrumentation Applications

Fujitsu Announces Volume Production of 2Mbit FRAM ICs; New Non-volatile, Low-Power ICs Serve Automotive, Printer, Instrumentation Applications

Fujitsu Semiconductor America Inc.

Sunnyvale, CA, April 18, 2007

The Fujitsu MB85R2001 and MB85R2002 feature non-volatile memory with high-speed data writing, low power consumption, and the ability to provide a high number of write cycles. They are ideal for automotive navigation systems, multi-function printers, measuring instruments, and other advanced applications that can use non-volatile memory to store various parameters, record equipment operating conditions, and preserve security information.

The FRAM’s high-speed data writing and the high number of available write cycles allow its application in office equipment to store event counts or parameters, and log every event. FRAMs allow 10 billion read/write cycles, which corresponds to writing 30 times a second continuously for 10 years. FRAMs also can store data for more than 10 years without a battery. In applications such as instrumentation, the Fujitsu FRAM write mechanism ensures that data can be written to FRAM at high speed even if the power is interrupted even temporarily, so valuable data will not be lost.

The configuration of MB85R2001 is 256K words x 8 bits; the configuration of MB85R2002 is 128K words x 16 bits. Both feature read access times of 100 nanoseconds (ns), and read/write cycle times of 150ns. They operate from 3V to 3.6V.

“FRAM technology is particularly ideal for applications that require a high number of write cycles and low power consumption, as well as high-speed data writing. These new FRAMs provide the increased functionality and higher memory capacity required in new automotive, instrumentation, and other advanced designs,” said Keith Horn, chief operating officer of Fujitsu Microelectronics America. “The new FRAMs also share the electrical characteristics of the 1Mbit FRAMs from Fujitsu, enabling an easy migration to the higher capacity versions with the added connection of only one address.”

As a pioneer in FRAM development, Fujitsu started volume production in 1999, and reached worldwide sales in excess of 500 million chips, including discrete memory chips as well as chips with embedded FRAM memory. Due to the ongoing demand for larger FRAM memory, Fujitsu decided to double the memory capacity, resulting in the development and production of the MB85R2001 and MB85R2002. Compared to battery-backed SRAM, the elimination of battery from FRAM simplifies production processes and removes the hassles of battery replacement and maintenance in products using the Fujitsu FRAM. Like all other FRAM products from Fujitsu, the MB85R2001 and MB85R2002 reduce material waste and are environmentally friendly.

The new 2Mbit FRAM products have the same electrical characteristics and TSOP-48 package as Fujitsu’s 1Mbit FRAM products (MB85R1001, MB85R1002) that are currently in production. With the additional connection of only one address, a shift to the 2Mbit products has been made possible. Therefore, on the same printed circuit board and depending on the necessary memory capacity, either the 1Mbit or 2Mbit FRAM can be used.

The new FRAMs are available in 48-pin TSOPs now, and production pricing is available upon request.

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About Fujitsu Microelectronics America, Inc.

Fujitsu Microelectronics America, Inc. (FMA) leads the industry in innovation. FMA provides high-quality, reliable semiconductor products and services for the networking, communications, automotive, security and other markets throughout North and South America. For more information about 10 Gigabit Ethernet please see,or address e-mail to

Press Contact - FMA

Emi Igarashi

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Company:Fujitsu Microelectronics America, Inc.

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Date: April 18, 2007
City: Sunnyvale, CA
Company: Fujitsu Microelectronics America, Inc.