GaN has changed the world with high brightness LEDs and high power RF devices and now it expands to power applications. GaN offers higher performance and GaN epitaxial material is scalable to 6inch and 8inch Silicon substrates for a low cost platform.
Due to the extremely high mobility of GaN material, the technology lends itself to operate at higher switching frequencies and higher speeds leading to smaller size and lower weight power converter solutions. This in turn allows for smaller inductors, transformers, capacitors, heat sinks, PCBs and boxes/enclosures. Combined with increased efficiency end lower power losses results in a higher performance and cost reduced system compared to Silicon solutions.
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