High-density power supplies for PCs, servers and telecom equipment in the 200W to 5000W power range are addressed by compact power supplies and adapters utilizing Transphorm's Gallium Nitride (GaN) devices. With Transphorm GaN-on-Silicon High-Electron-Mobility-Transistor (HEMT), 99% 1:2 boost efficiency at 100 kHz can be achieved. Low On-resistance, low charge and high speed are key in obtaining this high efficiency. GaN is also the solution in power supply circuitries such as Power Factor Correction (PFC) and LLC topologies. For the first time, bridgeless Totem-Pole PFCs are possible when using GaN transistors as the simplest solution (lowest component count).
Transphorm is redefining electric power conversion, providing cost-competitive and easy-to-embed power conversion devices that reduce costly energy loss by more than 50% and simplify the design and manufacturing of motor drives. Gallium Nitride (GaN) High-Electron-Mobility-Transistor (HEMT) offers Low Qrr in Reverse Conduction Mode for high frequency, highly efficient motion control systems enabling simple hard-switched bridge operation while drastically decreasing switching losses and system size.
To completely take advantage of LED efficiency, the LED driver need to be highly efficient as well as miniaturized. With the superior features of Transphorm's Gallium Nitride (GaN) High-Electron-Mobility-Transistors (HEMT's), both high efficiency and high frequency operation can be achieved, thereby making LED drivers (in the range of 100W to 500W) smaller, more efficient and reliable.
Using Transphorm Gallium Nitride (GaN) semiconductors to create electric vehicle chargers will make the system more compact and efficient than traditional EV chargers. Reducing the size and weight of the battery charger helps improving the overall performance of the EV.
GaN semiconductors process electricity faster compared to silicon semiconductors used in conventional EV battery chargers. These high-speed semiconductors combined with lighter-weight electrical circuit components like inductors and capacitors decrease the overall weight and cost of the EV charger.
Transphorm's 600V Gallium Nitride (GaN) solutions enable smallest, fan-free residential PV inverters with record efficiency. Three times higher frequencies compared to silicon-based units can reduce the size of the solutions thanks to its smaller magnetics and heat sinks.
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