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FRAM

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FRAM (Ferroelectric Random Access Memory) is a "non-volatile" "random access" memory, which uses ferroelectric film as a capacitor for storing data.
(Fujitsu utilizes PZT as ferroelectric material)

Combining the advantages of both ROM and RAM devices, FRAM can achieve high-speed read/write and also retain data even after the power is turned off.
Following are the advantages of FRAM:  

♦High-speed writing (1/30,000 of E2PROM)

♦High endurance (1E10 times)

♦Low power consumption (1/400 of E2PROM)

♦Non-volatility

♦Excellent tamper prevention

 Semiconductor memory classification
Semiconductor memory classification

 Memory Types by density and endurance
Memory Types by deusity and eudurace
 PZT Crystal Structure
PZT Crystal Structure

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