Fujitsu Microelectronics Asia Pte Ltd

Fujitsu introduces 256Mbit Mobile FCRAM™ compliant with COSMORAM Rev.4

A unique Fujitsu’s technology that provides high-speed but low power consumption for optimum mobile phone performance

Singapore, November 28, 2006 — Fujitsu Microelectronics Asia Pte Ltd (FMAL) today announced the availability of a new 256Mbit Mobile Fast Cycle RAM (FCRAM). The Mobile FCRAM is a pseudo static RAM (PSRAM) with an SRAM interface on Fujitsu’s unique FCRAM core technology, with the advantage of high-speed operation together with low power consumption, making it especially well-suited for mobile applications such as cellular phones.

The new Mobile FCRAM (MB82DDS08314A), adopts double data rate (DDR) burst mode operations and is fully compliant with the common specifications for Mobile RAM (COSMORAM) Revision 4⁽¹⁾.

The device has the following features:

• DDR synchronous burst mode
• Multiplexed address/data interface
• High-speed data transfer performance of max. 1GByte/s
• Short initial access time by short latency mode

In addition, a 256Mbit single data rate (SDR) Mobile FCRAM (MB82DBS08314A) that is compliant with the conventional COSMORAM Rev.3, is also offered. This device provides solution for customers who need large RAM density with an existing SDR PSRAM interface.

“As more sophisticated features are developed for future mobile phones, the new mobile FCRAM will be come necessary components to provide memories of large-density, high-speed operation and low power consumption, “said Mr Chng Kean Wui, Marketing Director of Standard LSI Unit at FMAL. Fujitsu’s FCRAM family also provides high-speed data rate on the existing PSRAM-based platform, to enhance those feature-rich functions such as digital still and video cameras, and digital terrestrial broadcasting streaming. Furthermore, customers need not have a complicated board design as the new device minimises the pin-counts by multiplexing address and data bus.

Fujitsu is the pioneer of pseudo SRAM for mobile phone markets and is a major contributor to the establishment and expansion of the market. In the past, to meet the needs of high-speed memory, Fujitsu has introduced the burst mode Mobile FCRAM family, 32Mbit/ 64Mbit devices in May of 2003 and a 128Mbit device in August of 2003.

Engineering samples will be available in January 2007, and volume production will be available in April 2007. Both devices are available packaged, as well as in chip and wafer form.

1 common specifications for Mobile RAM (COSMORAM) Revision 4:

Common specifications for double data rate burst pseudo SRAM user interface announced by Fujitsu, NEC Electronics and Toshiba on February 15, 2006.

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About Fujitsu Microelectronics Asia Pte Ltd

Fujitsu Microelectronics Asia Pte Ltd (FMAL) was established in 1986 to provide semiconductor sales and support solutions to customers in Southeast Asia, India and Oceania. FMAL offers a diverse array of application-oriented semiconductor products and solutions such as ASIC, ASSPs, microcontrollers / microprocessors (FR-V), System Memory (Flash Memory / FRAM / FCRAM) and System LSIs (DVD MPEG Source Decoders / MPEG –2 Encoders).
For more information, please see: http://www.fujitsu.com/sg/services/micro/semiconductor

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