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Fujitsu Limited


Fujitsu Unveils World's First Multi-Chip Package with Burst Mode Functionality

Features 128 Mb Flash Memory and 64 Mb Mobile FCRAM


Singapore, 2 June 2003 — Fujitsu Limited today announced the development of a new memory product for next-generation mobile phones and other high-performance mobile applications, the MB84SR6H5K5K1, a multi-chip package (MCP) combining Mobile Fast Cycle RAM (FCRAM*1) and burst mode(*2) flash memory. Fujitsu is shipping samples of the new chip package starting today.

The new multi-chip package includes one 128 Mbit (Mb) NOR-type flash memory and two 64 Mb Mobile FCRAM chips compliant with the Common Specification for Mobile RAM (COSMORAM*3). Both memory units are capable of burst-mode operation at 66 MHz, enabling high-speed data access. Moreover, the new MCP is a low-voltage device, requiring only 1.8V of power.

The product is designed especially for use in 3G mobile phones, where the burst mode operation will deliver the high-speed data transfer rates essential for sending and playback of streaming video and other multimedia functions.

Fujitsu plans to extend this line to suit diverse customer needs, adding a model with 64 Mb flash memory and 32 Mb Mobile FCRAM, and increasing burst frequencies to 80 MHz and even 100 MHz.

Features

1. Fast access times

  • Adding burst-mode capabilities to both the flash memory and Mobile FCRAM allows for faster read operations.
  • Burst-mode access times are 11 ns for flash memory, 12 ns for Mobile FCRAM (at 66 MHz).
  • Asynchronous read/write operations also supported.

2. Low power consumption

  • Operating on 1.8 V power, the flash memory requires a maximum of 10 µA, the Mobile FCRAM a maximum of 120 µA of standby current.
  • The Mobile FCRAM also includes a power-down mode that dramatically reduces its power requirements (max 10 µA).

3. Pin layout shared by all three COSMORAM-developing companies

  • Support for the COSMORAM standard (including pin layouts) simplifies board and connector design for customers.

Main Specifications of the MB84SR6H5K5K1

Flash memory Mobile FCRAM
Packaging 9 x 12 x 1.4 mm 115-pin FBGACOSMORAM-compliant burst-MCP pin layout
Density 128 Mb 64 Mb (x 2)
I/O configuration x16 x16
Operating voltage 1.65 to 1.95V 1.65 to 1.95V
Operating temperature -30 to +85°C -30 to +85°C
Burst frequency 66 MHz 66 MHz
Burst access time (max) 11 ns 12 ns
Address access time (max) 56 ns 70 ns
Page access time (max) - 20 ns
Active current (max) 30 mA 30 mA
Standby current (max) 10 µA 120 µA (per chip)
Power-down current (max) - 10 µA (per chip)
Erase/rewrite cycles (min) 100,000 -

Glossary

*1. Mobile FCRAM (fast-cycle RAM

FCRAM is an advanced memory core design, proprietary to Fujitsu, with low power consumption and fast operation. Mobile FCRAM is a pseudo-SRAM technology that couples an FCRAM core to an SRAM interface

*2. Burst mode

A special mode of operation for memory enabling fast, continuous reads synchronized to the system clock, so that a large amount of information can be read in a large block, simply by specifying one partial address. FCRAM adds the ability to perform write operations in burst mode as well.

*3. Common Specification for Mobile RAM (COSMORAM)

A specification developed jointly by Fujitsu Limited, NEC Electronics Corp. and Toshiba Corp., and announced on February 17, 2003. Refers to a standard for burst mode pseudo-SRAM chips and MCPs containing these chips.

Sample Pricing and Availability

Product name : MB84SR6H5K5K1
Price : ¥15,000 in Japan (excl tax)
Available : beginning June 2, 2003
Sales target : 1 million units/month


About Fujitsu

Fujitsu is a leading provider of customer-focused IT and communications solutions for the global marketplace. Pace-setting technologies, highly reliable computing and telecommunications platforms, and a worldwide corps of systems and services experts uniquely position Fujitsu to deliver comprehensive solutions that open up infinite possibilities for its customers' success. Headquartered in Tokyo, Fujitsu Limited (TSE:6702) reported consolidated revenues of 4.6 trillion yen (US$38 billion) for the fiscal year ended March 31, 2003.
For more information, please see: www.fujitsu.com


Press Contacts

Website: http://www.fujitsu.com/news/contacts/


Electronic Devices
LSI Group, System Memory Division
Technology & System Application Enabling Department
Tel: +81-42-532-1399 (direct)
E-mail:edevice@fujitsu.com

*All product names and company names mentioned herein are the trademarks or registered trademarks of their respective firms.


FCRAM is a registered trademark of Fujitsu Limited.

All other product names and company names mentioned herein are the trademarks or registered trademarks of their respective firms.