Fujitsu Microelectronics Asia Pte Ltd

Fujitsu Introduces World First 1MBit Class Ferroelectric Random Access Memory

Singapore, December 16, 2004 — Fujitsu Microelectronics Asia Pte Ltd today introduces and is sampling its 1MBit ferroelectric random access memory (FRAM), the largest-ever capacity for FRAM non-volatile memory that offers high-speed read and write operations, low power consumption and high endurance.

Fujitsu has also introduced 1T1C cell technology that can realise twice as much capacity than its traditional 2T2C cell technology. This high capacity has been achieved without increasing the die size.

With the latest 0.35um1T1C cell technology, Fujitsu was able to develop two 1Mbit FRAM devices - “MB85R1001"(×8 bits) and “MB85R1002"(×16 bits), the highest capacity of its FRAM products.

FRAM meets the growing demand for non-volatile memory with high-speed operation, low power consumption and high endurance in many types of devices. These include office equipment (such as printers and copier machines), portable information devices home appliances (microwaves ovens and washing machines, for instance) and industrial equipment (power meter). FRAM also provides a memory boost to applications such as store security information like Smart Card and RFID.

Fujitsu offers next generation memory solutions with its expanding line-up of environmental-friendly FRAM products, which is very suitable replacement for random access memory (RAM) with Battery Backup. This will reduce the maintenance cost for the products. Development costs are also lowered by using random access memory (RAM) or read-only memory (ROM) replaceable FRAM.

A world leader in FRAM development and mass production, Fujitsu will be the first company to mass-produce megabit-class FRAM. With the combined features of both RAM and ROM, FRAM offers the following benefits compared to electrically erasable programmable ROM (EEPROM):

• A writing speed that is more than 10,000 times faster
• Power consumption during write operations is ten times smaller
• Rewriting endurance that is more than 100,000 times higher

Major Specifications of 1MBit FRAM devices

	MB85R1001	MB85R1002
Bit Configuration	128K words×8 bits	64K words×16 bits
Operating Power Supply Voltage	+3.0V～+3.6V
Operating Temperature Range	-20°C～+85°C
Read Access Time	100ns
Read Cycle Time Write Cycle Time	250ns
Data Retention	More than 10 years
Endurance	More than 10 Billion times
Package	TSOP48, TSOP32 (Plan)	TSOP48, FBGA48
Embedded function	-	/LB,/UB switching
	Power-on protect system

---

About Fujitsu Microelectronics Asia Pte Ltd

Fujitsu Microelectronics Asia Pte Ltd was established as the Asia Pacific Headquarters of Fujitsu Limited Electronic Devices Group in 1986. It provides support, sales and marketing of Microelectronics and Flat Panel Display products to the Asia Pacific region, including India and Oceania.
Fujitsu Microelectronics Asia offers a wide and varied product range like ASIC, ASSPs, Flat Panels (LCD / PDP), Microcontrollers / Microprocessors (FR-V), System Memory (Flash Memory / FRAM / FCRAM) and System LSIs ( DVD MPEG Source Decoders / MPEG –2 Encoders)

---

---

FRAM is a registered trademark of Ramtron International Corporation. All other company/product names mentioned may be trademarks or registered trademarks of their respective holders.