Fujitsu Limited

Fujitsu Unveils New Flash Memory Products

128-Mbit Burst Mode Flash and 8-Mbit Super CSP Flash, Each with 1.8 V Single-Cell Power

Singapore, 10 April 2003 — Fujitsu Limited today announced the release of two new low-voltage (1.8V) flash-memory products that respond to mobile communications devices' growing needs for greater storage capacity, high-speed operation and lower power consumption. The MBMN29BS12DH is a NOR-type 128-Mbit product with burst mode functionality for use in mobile devices. The MBM29SL800TE and MBM29SL800BE are NOR-type 8-Mbit products employing Super Chip Size Package (Super-CSPTM) packaging technology for use in wireless communications modules, such as Bluetooth, and for ultra-compact mobile devices.

Product Pricing and Availability

Sales Targets
MBM29BS12DH: 1 million units/month
MBM29SL800TE/MBM29SL800BE: 100,000 units/month (combined)

Main Features of the MBM29BS12DH

1. High-speed read operations
   After power-up, the time it takes to output data starting from a fixed address is 46 nanoseconds (when operating at 80 MHz in handshake mode). Access time in burst mode is 8.5 nanoseconds (when operating at 80 MHz). Optimal burst mode can be selected based on configuration-register setting.
2. Low power demands
   Burst access read operation is carried out by restricting the number of sense amplifiers to two-word access, resulting in a product that requires less power than similar models from other companies. In standby mode, this product requires only about one-twentieth the power of models from other companies.

Main features of the MBM29SL800TE/ MBM29SL800BE

1. Packaged using ultra-compact Super-CSPTM.
   The use of Super-CSP packaging reduces footprint. Compared to single-chip packaging, it also simplifies handling, thereby increasing board level reliability.
2. High-speed access
   Access time at 1.8V is 90 nanoseconds.

Main Specifications

	MBM29BS12DH	MBM29SL800TE	MBM29SL800BE
Process technology	0.13 µm CMOS	0.23 µm CMOS
Cell structure	2-layer polysilicon NOR-type memory cells	2-layer polysilicon NOR-type memory cells
Power source	1.65 to 1.95V	1.65 to 1.95V
Capacity	128 Mbit	8 Mbit
I/O structure	X16	x8/x16
Bank structure (4-bank structure)	Bank A: 16 Mbit Bank B: 48 Mbit Bank C: 48 Mbit Bank D: 16 Mbit
Low-power modes	Automatic-sleep mode: standby current: 10 µA (max) Standby current: 0.2 µA (typ) Read operation: 30 mA (max) (Burst-mode, f=80 MHz) Write/delete operation: 40 mA (max)	Automatic-sleep mode: standby current: 5 µA (max) Standby current: 1 µA (typ) Read operation: 20 mA (max) (Word-mode, f=10 MHz) Write/delete operation: 25 mA (max)
Rewrite cycles	100,000 (min)	100,000 (min)
Packaging	Standard 80-ball FBGA	Standard 45-ball Super CSP
Other features	Acceleration Burst suspension Handshake mode

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About Fujitsu

Fujitsu is a leading provider of customer-focused IT and communications solutions for the global marketplace. Pace-setting technologies, highly reliable computing and telecommunications platforms, and a worldwide corps of systems and services experts uniquely position Fujitsu to deliver comprehensive solutions that open up infinite possibilities for its customers' success. Headquartered in Tokyo, Fujitsu Limited (TSE:6702) reported consolidated revenues of 4.6 trillion yen (US$38 billion) for the fiscal year ended March 31, 2003.
For more information, please see: www.fujitsu.com

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